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Class Information
Number: 257/E21.422
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Multi-step process for the manufacture of unipolar device (epo) > Field-effect transistor (epo) > With an insulated gate (epo) > With floating gate (epo)
Description: This subclass is indented under subclass E21.409. This subclass is substantially the same in scope as ECLA classification H01L21/336F.










Patents under this class:

Patent Number Title Of Patent Date Issued
7057231 Nonvolatile memory cell with a floating gate at least partially located in a trench in a semiconductor substrate Jun. 6, 2006
7052959 Method of forming an EPROM cell and structure therefor May. 30, 2006
7053443 Cell structure of EPROM device and method for fabricating the same May. 30, 2006
7049652 Pillar cell flash memory technology May. 23, 2006
7049188 Lateral doped channel May. 23, 2006
7045418 Semiconductor device including a dielectric layer having a gettering material located therein and a method of manufacture therefor May. 16, 2006
7045419 Elimination of the fast-erase phenomena in flash memory May. 16, 2006
7042052 Transistor constructions and electronic devices May. 9, 2006
7037787 Flash memory with trench select gate and fabrication process May. 2, 2006
7037860 Modified source/drain re-oxidation method and system May. 2, 2006
7033957 ONO fabrication process for increasing oxygen content at bottom oxide-substrate interface in flash memory devices Apr. 25, 2006
7029989 Semiconductor device and method of manufacturing the same Apr. 18, 2006
7030444 Space process to prevent the reverse tunneling in split gate flash Apr. 18, 2006
7026170 Methods of controlling optical properties of a capping insulating layer on memory devices, and system for performing same Apr. 11, 2006
7018897 Self aligned method of forming a semiconductor memory array of floating gate memory cells with control gate spacers Mar. 28, 2006
7015539 Nonvolatile semiconductor memory cell and method of manufacturing the same Mar. 21, 2006
7012311 Semiconductor device formed on (111) surface of a Si crystal and fabrication process thereof Mar. 14, 2006
7005335 Array of nanoscopic mosfet transistors and fabrication methods Feb. 28, 2006
7005338 Nonvolatile memory cell with a floating gate at least partially located in a trench in a semiconductor substrate Feb. 28, 2006
7005697 Method of forming a non-volatile electron storage memory and the resulting device Feb. 28, 2006
7001810 Floating gate nitridation Feb. 21, 2006
7002204 Non-volatile semiconductor memory and process of fabricating the same Feb. 21, 2006
6999346 Memory device comprising single transistor having functions of RAM and ROM and methods for operating and manufacturing the same Feb. 14, 2006
6995421 Cell structure of non-volatile memory device and method for fabricating the same Feb. 7, 2006
6991988 Static pass transistor logic with transistors with multiple vertical gates Jan. 31, 2006
6990023 Horizontal memory devices with vertical gates Jan. 24, 2006
6984557 Method of manufacturing a semiconductor device with non-volatile memory comprising a memory cell with an access gate and with a control gate and a charge storage region Jan. 10, 2006
6984558 Method of manufacturing a semiconductor device with non-volatile memory comprising a memory cell with an access gate and with a control gate and a charge storage region Jan. 10, 2006
6984590 Method of manufacturing an EEPROM device Jan. 10, 2006
6982456 Nonvolatile semiconductor memory device and method for fabricating the same Jan. 3, 2006
6982457 Semiconductor devices, and electronic systems comprising semiconductor devices Jan. 3, 2006
6979615 System and method for forming a semiconductor with an analog capacitor using fewer structure steps Dec. 27, 2005
6977200 Method of manufacturing split-gate memory Dec. 20, 2005
6977411 Semiconductor device comprising transistors having control gates and floating gate electrodes Dec. 20, 2005
6969650 Methods of forming gate structures in nonvolatile memory devices having curved side walls formed using oxygen pathways Nov. 29, 2005
6962851 Nonvolatile memories and methods of fabrication Nov. 8, 2005
6962852 Nonvolatile memories and methods of fabrication Nov. 8, 2005
6963102 Non-volatile semiconductor memory having a decreased gate length Nov. 8, 2005
6963105 Flash memory cell structure Nov. 8, 2005
6958273 Self-aligned method of forming a semiconductor memory array of floating gate memory cells with buried floating gate, pointed floating gate and pointed channel region, and a memory array made t Oct. 25, 2005
6955963 Damascene architecture electronic storage and method for making same Oct. 18, 2005
6952035 Semiconductor device of non-volatile memory Oct. 4, 2005
6949784 Zero-cost non-volatile memory cell with write and erase features Sep. 27, 2005
6946374 Methods of manufacturing flash memory semiconductor devices Sep. 20, 2005
6943071 Integrated memory cell and method of fabrication Sep. 13, 2005
6943403 Non-volatile memory cells having floating gate and method of forming the same Sep. 13, 2005
6940119 Non-volatile programmable and electrically erasable memory with a single layer of gate material Sep. 6, 2005
6936527 Low voltage non-volatile memory cell Aug. 30, 2005
6933557 Fowler-Nordheim block alterable EEPROM memory cell Aug. 23, 2005
6929991 Reliable semiconductor device and method of manufacturing the same Aug. 16, 2005











 
 
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