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Class Information
Number: 257/E21.422
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Multi-step process for the manufacture of unipolar device (epo) > Field-effect transistor (epo) > With an insulated gate (epo) > With floating gate (epo)
Description: This subclass is indented under subclass E21.409. This subclass is substantially the same in scope as ECLA classification H01L21/336F.










Patents under this class:

Patent Number Title Of Patent Date Issued
5687113 Electrically programmable memory cell Nov. 11, 1997
5684317 MOS transistor and method of manufacturing thereof Nov. 4, 1997
5677215 Method of fabricating a nonvolatile semiconductor memory device Oct. 14, 1997
5677216 Method of manufacturing a floating gate with high gate coupling ratio Oct. 14, 1997
5677876 Flash EEPROM with impurity diffused layer in channel area and process of production of same Oct. 14, 1997
5654219 Annealed poly-silicide etch process Aug. 5, 1997
5650648 Integrated circuit structure having floating electrode with discontinuous phase of metal silicide formed on a surface thereof and process for making same Jul. 22, 1997
5650649 Floating gate type field effect transistor having control gate applied with pulses for evacuating carriers from p-type semiconductor floating gate Jul. 22, 1997
5644152 Conductive germanium/silicon member with a roughened surface thereon suitable for use in an integrated circuit structure Jul. 1, 1997
5640031 Spacer flash cell process Jun. 17, 1997
5633184 Method of making semiconductor device with floating bate May. 27, 1997
5627779 Non-volatile semiconductor memory having an array of non-volatile memory cells and method for driving the same May. 6, 1997
5625213 Top floating-gate flash EEPROM structure Apr. 29, 1997
5616511 Method of fabricating a micro-trench storage capacitor Apr. 1, 1997
5614748 Nonvolatile memory device and process for production of the same Mar. 25, 1997
5606521 Electrically erasable and programmable read only memory with non-uniform dielectric thickness Feb. 25, 1997
5604366 Floating gate memory device having discontinuous gate oxide thickness over the channel region Feb. 18, 1997
5597749 Method of making nonvolatile memory cell with crystallized floating gate Jan. 28, 1997
5591652 Method of manufacturing flash memory with inclined channel region Jan. 7, 1997
5592002 Non-volatile semiconductor memory device having reduced current consumption Jan. 7, 1997
5592003 Nonvolatile semiconductor memory and method of rewriting data thereto Jan. 7, 1997
5585656 High coupling ratio of flash memory Dec. 17, 1996
5576569 Electrically programmable and erasable memory device with depression in lightly-doped source Nov. 19, 1996
5573965 Method of fabricating semiconductor devices and integrated circuits using sidewall spacer technology Nov. 12, 1996
5574685 Self-aligned buried channel/junction stacked gate flash memory cell Nov. 12, 1996
5569945 Stepped floating gate EPROM device Oct. 29, 1996
5569946 Flash memory cell with self-aligned tunnel dielectric area above LDD structure Oct. 29, 1996
5568418 Non-volatile memory in an integrated circuit Oct. 22, 1996
5567635 Method of making a three dimensional trench EEPROM cell structure Oct. 22, 1996
5567637 Method of fabricating a micro-trench floating gate electrode for flash memory cell Oct. 22, 1996
5557122 Semiconductor electrode having improved grain structure and oxide growth properties Sep. 17, 1996
5541877 Nonvolatile semiconductor memory device having electric field buffering means Jul. 30, 1996
5538923 Method for achieving a high quality thin oxide using a sacrificial oxide anneal Jul. 23, 1996
5538923 Method for achieving a high quality thin oxide using a sacrificial oxide anneal Jul. 23, 1996
5532181 Method of manufacturing semiconductor non-volatile memory device having different gate insulating thicknesses Jul. 2, 1996
5530276 Nonvolatile semiconductor memory device Jun. 25, 1996
5527728 Method of making thin oxide portions consisting of gate and tunnel oxides particularly in electrically erasable and programmable read-only memory cells Jun. 18, 1996
5521108 Process for making a conductive germanium/silicon member with a roughened surface thereon suitable for use in an integrated circuit structure May. 28, 1996
5518943 Method of manufacturing nonvolatile semiconductor memory device having an implanted damage layer May. 21, 1996
5514607 Method of manufacturing a semiconductor memory device May. 7, 1996
5514890 Electrically erasable programmable memory device with improved erase and write operation May. 7, 1996
5514896 Nonvolatile semiconductor memory device May. 7, 1996
5510639 Non-volatile semiconductor memory having a ring-shaped floating gate Apr. 23, 1996
5504358 Asymmetric non-volatile memory cell Apr. 2, 1996
5502321 Flash memory having inclined channel Mar. 26, 1996
5498558 Integrated circuit structure having floating electrode with discontinuous phase of metal silicide formed on a surface thereof and process for making same Mar. 12, 1996
5496747 Split-gate process for non-volatile memory Mar. 5, 1996
5493140 Nonvolatile memory cell and method of producing the same Feb. 20, 1996
5491101 Manufacturing method of non-volatile semiconductor memory devices Feb. 13, 1996
5488243 SOI MOSFET with floating gate Jan. 30, 1996











 
 
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