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Class Information
Number: 257/E21.422
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Multi-step process for the manufacture of unipolar device (epo) > Field-effect transistor (epo) > With an insulated gate (epo) > With floating gate (epo)
Description: This subclass is indented under subclass E21.409. This subclass is substantially the same in scope as ECLA classification H01L21/336F.

Patents under this class:
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Patent Number Title Of Patent Date Issued
5922619 Patternless technique for building self-aligned floating gates Jul. 13, 1999
5923978 Nonvolatile semiconductor memory and methods for manufacturing and using the same Jul. 13, 1999
5920453 Completely encapsulated top electrode of a ferroelectric capacitor Jul. 6, 1999
5920776 Method of making asymmetric nonvolatile memory cell Jul. 6, 1999
5917214 Split gate flash memory unit Jun. 29, 1999
5917215 Stepped edge structure of an EEPROM tunneling window Jun. 29, 1999
5918125 Process for manufacturing a dual floating gate oxide flash memory cell Jun. 29, 1999
5915177 EPROM manufacturing process having a floating gate with a large surface area Jun. 22, 1999
5915178 Method for improving the endurance of split gate flash EEPROM devices via the addition of a shallow source side implanted region Jun. 22, 1999
5912488 Stacked-gate flash EEPROM memory devices having mid-channel injection characteristics for high speed programming Jun. 15, 1999
5910912 Flash EEPROM with dual-sidewall gate Jun. 8, 1999
5907172 Split-gate flash memory cell structure May. 25, 1999
5907775 Non-volatile memory device with high gate coupling ratio and manufacturing process therefor May. 25, 1999
5907780 Incorporating silicon atoms into a metal oxide gate dielectric using gas cluster ion beam implantation May. 25, 1999
5904524 Method of making scalable tunnel oxide window with no isolation edges May. 18, 1999
5903494 Electrically programmable memory cell May. 11, 1999
5899718 Method for fabricating flash memory cells May. 4, 1999
5897354 Method of forming a non-volatile memory device with ramped tunnel dielectric layer Apr. 27, 1999
5898197 Non-volatile semiconductor memory devices Apr. 27, 1999
5895240 Method of making stepped edge structure of an EEPROM tunneling window Apr. 20, 1999
5896314 Asymmetric flash EEPROM with a pocket to focus electron injection and a manufacturing method therefor Apr. 20, 1999
5894148 Floating gate FPGA cell with counter-doped select device Apr. 13, 1999
5888836 Process for the repair of floating-gate non-volatile memories damaged by plasma treatment Mar. 30, 1999
5888867 Non-uniform threshold voltage adjustment in flash eproms through gate work function alteration Mar. 30, 1999
5888870 Memory cell fabrication employing an interpoly gate dielectric arranged upon a polished floating gate Mar. 30, 1999
5885870 Method for forming a semiconductor device having a nitrided oxide dielectric layer Mar. 23, 1999
5885871 Method of making EEPROM cell structure Mar. 23, 1999
5886377 Semiconductor device and a method for manufacturing thereof Mar. 23, 1999
5886379 Semiconductor memory device with increased coupling ratio Mar. 23, 1999
5882970 Method for fabricating flash memory cell having a decreased overlapped region between its source and gate Mar. 16, 1999
5882994 Nonvolatile semiconductor memory, and method of manufacturing the same Mar. 16, 1999
5883001 Integrated circuit passivation process and structure Mar. 16, 1999
5879989 Method for fabricating nonvolatile memory device using disposable layer Mar. 9, 1999
5879992 Method of fabricating step poly to improve program speed in split gate flash Mar. 9, 1999
5879993 Nitride spacer technology for flash EPROM Mar. 9, 1999
5880008 Method for forming field oxide film Mar. 9, 1999
5880499 Memory cell of a nonvolatile semiconductor device Mar. 9, 1999
5877523 Multi-level split- gate flash memory cell Mar. 2, 1999
5874759 Flash memory cell and method of fabricating the same Feb. 23, 1999
5872035 Method of forming a floating gate in a flash memory device Feb. 16, 1999
5872036 Method of manufacturing a split-gate flash memory cell Feb. 16, 1999
5869369 Method of fabricating a flash memory Feb. 9, 1999
5869370 Ultra thin tunneling oxide using buffer CVD to improve edge thinning Feb. 9, 1999
5864932 Partially or completely encapsulated top electrode of a ferroelectric capacitor Feb. 2, 1999
5863822 Method of making non-volatile semiconductor memory devices having large capacitance between floating and control gates Jan. 26, 1999
5858840 Method of forming sharp beak of poly by nitrogen implant to improve erase speed for split-gate flash Jan. 12, 1999
5856690 Dielectric for amorphous silicon transistors Jan. 5, 1999
5854108 Method and system for providing a double diffuse implant junction in a flash device Dec. 29, 1998
5852312 Flash eeprom cell Dec. 22, 1998
5847411 Semiconductor device having a channel region including a vacancy-introduced polysilicon layer Dec. 8, 1998

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