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Class Information
Number: 257/E21.422
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Multi-step process for the manufacture of unipolar device (epo) > Field-effect transistor (epo) > With an insulated gate (epo) > With floating gate (epo)
Description: This subclass is indented under subclass E21.409. This subclass is substantially the same in scope as ECLA classification H01L21/336F.










Patents under this class:
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Patent Number Title Of Patent Date Issued
6025240 Method and system for using a spacer to offset implant damage and reduce lateral diffusion in flash memory devices Feb. 15, 2000
6020238 Method of fabricating a high dielectric constant interpolysilicon dielectric structure for a low voltage non-volatile memory Feb. 1, 2000
6017792 Process for fabricating a semiconductor device including a nonvolatile memory cell Jan. 25, 2000
6017793 Method of forming a memory cell of a nonvolatile semiconductor memory device Jan. 25, 2000
6017796 Method of fabricating flash electrically-erasable and programmable read-only memory (EEPROM) device Jan. 25, 2000
6015725 Vertical field effect transistor and manufacturing method thereof Jan. 18, 2000
6008090 Method of forming high density flash memories with high capacitive-couping ratio and high speed operation Dec. 28, 1999
6008517 High density and low power flash memories with a high capacitive-coupling ratio Dec. 28, 1999
6005807 Method and apparatus for self-aligned memory cells and array using source side injection Dec. 21, 1999
6001690 Method of forming flash EPROM by using iso+aniso silicon nitride spacer etching technology Dec. 14, 1999
5998264 Method of forming high density flash memories with MIM structure Dec. 7, 1999
5999453 Nonvolatile semiconductor memory Dec. 7, 1999
5994185 Method of fabricating flash memory cell Nov. 30, 1999
5990515 Trenched gate non-volatile semiconductor device and method with corner doping and sidewall doping Nov. 23, 1999
5985705 Low threshold voltage MOS transistor and method of manufacture Nov. 16, 1999
5985718 Process for fabricating memory cells with two levels of polysilicon for devices of EEPROM type Nov. 16, 1999
5985719 Method of forming a programmable non-volatile memory cell Nov. 16, 1999
5986303 Flash memory device and method for manufacturing the same Nov. 16, 1999
5982004 Polysilicon devices and a method for fabrication thereof Nov. 9, 1999
5981339 Narrower erase distribution for flash memory by smaller poly grain size Nov. 9, 1999
5981342 Method of making a semiconductor component with compensation implantation Nov. 9, 1999
5981381 Method of manufacturing a semiconductor memory device Nov. 9, 1999
5976932 Memory cell and method for producing the memory cell Nov. 2, 1999
5977585 Deposited tunneling oxide Nov. 2, 1999
5972751 Methods and arrangements for introducing nitrogen into a tunnel oxide in a non-volatile semiconductor memory device Oct. 26, 1999
5972753 Method of self-align cell edge implant to reduce leakage current and improve program speed in split-gate flash Oct. 26, 1999
5969384 Flash memory having separate data programming and erasing terminals Oct. 19, 1999
5970341 Method for forming vertical channels in split-gate flash memory cell Oct. 19, 1999
5970342 Method of forming high capacitive-coupling ratio and high speed flash memories with a textured tunnel oxide Oct. 19, 1999
5970371 Method of forming sharp beak of poly to improve erase speed in split-gate flash EEPROM Oct. 19, 1999
5963806 Method of forming memory cell with built-in erasure feature Oct. 5, 1999
5963824 Method of making a semiconductor device with adjustable threshold voltage Oct. 5, 1999
5960285 Flash EEPROM device Sep. 28, 1999
5959329 Insulating oxide film formed by high-temperature wet oxidation Sep. 28, 1999
5953602 EEPROM cell and related method of making thereof Sep. 14, 1999
5949102 Semiconductor device having a gate electrode with only two crystal grains Sep. 7, 1999
5950085 Method of manufacturing electrically erasable semiconductor non-volatile memory device Sep. 7, 1999
5950087 Method to make self-aligned source etching available in split-gate flash Sep. 7, 1999
5942779 Reduced-cost, flash memory element and memory apparatus Aug. 24, 1999
5943261 Method for programming a flash memory Aug. 24, 1999
5943571 Method for manufacturing fine structures Aug. 24, 1999
5940705 Methods of forming floating-gate FFRAM devices Aug. 17, 1999
5940706 Process for preventing misalignment in split-gate flash memory cell Aug. 17, 1999
5940709 Method and system for source only reoxidation after junction implant for flash memory devices Aug. 17, 1999
5940735 Reduction of charge loss in nonvolatile memory cells by phosphorus implantation into PECVD nitride/oxynitride films Aug. 17, 1999
5936276 Single polysilicon level flash EEPROM cell and manufacturing process therefor Aug. 10, 1999
5936883 Split gate type transistor memory device Aug. 10, 1999
5937295 Nano-structure memory device Aug. 10, 1999
5929479 Floating gate type non-volatile semiconductor memory for storing multi-value information Jul. 27, 1999
5929480 Nonvolatile semiconductor memory device having first and second floating gates Jul. 27, 1999

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