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Class Information
Number: 257/E21.422
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Multi-step process for the manufacture of unipolar device (epo) > Field-effect transistor (epo) > With an insulated gate (epo) > With floating gate (epo)
Description: This subclass is indented under subclass E21.409. This subclass is substantially the same in scope as ECLA classification H01L21/336F.










Patents under this class:
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Patent Number Title Of Patent Date Issued
6218699 Semiconductor component with adjustable current amplification based on a tunnel-current-controlled avalanche breakdown Apr. 17, 2001
6214666 Method of forming a non-volatile memory device Apr. 10, 2001
6214668 Structure of a channel write/erase flash memory cell and manufacturing method and operating method thereof Apr. 10, 2001
6214741 Method of fabricating a bit line of flash memory Apr. 10, 2001
6211016 Method for forming high density nonvolatile memories with high capacitive-coupling ratio Apr. 3, 2001
6211542 Completely encapsulated top electrode of a ferroelectric capacitor using a lead-enhanced escapsulation layer Apr. 3, 2001
6207505 Method for forming high density nonvolatile memories with high capacitive-coupling ratio Mar. 27, 2001
6207507 Multi-level flash memory using triple well process and method of making Mar. 27, 2001
6207978 Flash memory cells having a modulation doped heterojunction structure Mar. 27, 2001
6207990 Eeprom memory cell and corresponding manufacturing method Mar. 27, 2001
6207992 Vertical floating gate transistor with epitaxial channel Mar. 27, 2001
6204123 Vertical floating gate transistor with epitaxial channel Mar. 20, 2001
6200859 Method of fabricating a split-gate flash memory Mar. 13, 2001
6200865 Use of sacrificial dielectric structure to form semiconductor device with a self-aligned threshold adjust and overlying low-resistance gate Mar. 13, 2001
6194759 Semiconductor memory device Feb. 27, 2001
6194272 Split gate flash cell with extremely small cell size Feb. 27, 2001
6190966 Process for fabricating semiconductor memory device with high data retention including silicon nitride etch stop layer formed at high temperature with low hydrogen ion concentration Feb. 20, 2001
6190969 Method to fabricate a flash memory cell with a planar stacked gate Feb. 20, 2001
6188101 Flash EPROM cell with reduced short channel effect and method for providing same Feb. 13, 2001
6188102 Non-volatile semiconductor memory device having multiple different sized floating gates Feb. 13, 2001
6188103 Method of forming sharp beak of poly by nitrogen implant to improve erase speed for split-gate flash Feb. 13, 2001
6188614 Structure of a channel write/erase flash memory cell and manufacturing method and operating method thereof Feb. 13, 2001
6184084 Method to elimate silicide cracking for nand type flash memory devices by implanting a polish rate improver into the second polysilicon layer and polishing it Feb. 6, 2001
6184087 Method for forming high density nonvolatile memories with high capacitive-coupling ratio Feb. 6, 2001
6184088 Method for manufacturing a split game type transistor Feb. 6, 2001
6184553 Nonvolatile semiconductor memory device and method for fabricating the same, and semiconductor integrated circuit device Feb. 6, 2001
6180977 Self-aligned edge implanted cell to reduce leakage current and improve program speed in split-gate flash Jan. 30, 2001
6180980 Trench non-volatile memory cell Jan. 30, 2001
6177314 Method of manufacturing a semiconductor device comprising a field effect transistor Jan. 23, 2001
6178113 Dual floating gate programmable read only memory cell structure and method for its fabrication and operation Jan. 23, 2001
6171906 Method of forming sharp beak of poly to improve erase speed in split gate flash Jan. 9, 2001
6171908 Method of fabricating self-aligned split gate flash memory cell Jan. 9, 2001
6172394 Non-volatile semiconductor memory device having a floating gate with protruding conductive side-wall portions Jan. 9, 2001
6168993 Process for fabricating a semiconductor device having a graded junction Jan. 2, 2001
6168995 Method of fabricating a split gate memory cell Jan. 2, 2001
6165842 Method for fabricating a non-volatile memory device using nano-crystal dots Dec. 26, 2000
6165845 Method to fabricate poly tip in split-gate flash Dec. 26, 2000
6163049 Method of forming a composite interpoly gate dielectric Dec. 19, 2000
6159797 Method of fabricating a flash memory with a planarized topography Dec. 12, 2000
6159800 Method of forming a memory cell Dec. 12, 2000
6159801 Method to increase coupling ratio of source to floating gate in split-gate flash Dec. 12, 2000
6159803 Method of fabricating flash memory Dec. 12, 2000
6157057 Flash memory cell Dec. 5, 2000
6157058 Low voltage EEPROM/NVRAM transistors and making method Dec. 5, 2000
6157061 Nonvolatile semiconductor memory device and method of manufacturing the same Dec. 5, 2000
6153487 Approach for the formation of semiconductor devices which reduces band-to-band tunneling current and short-channel effects Nov. 28, 2000
6153904 Fabrication method for increasing the coupling efficiency of ETOX flash memory devices Nov. 28, 2000
6150184 Method of fabricating partially or completely encapsulated top electrode of a ferroelectric capacitor Nov. 21, 2000
6147377 Fully recessed semiconductor device Nov. 14, 2000
6147378 Fully recessed semiconductor device and method for low power applications with single wrap around buried drain region Nov. 14, 2000

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