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Class Information
Number: 257/E21.422
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Multi-step process for the manufacture of unipolar device (epo) > Field-effect transistor (epo) > With an insulated gate (epo) > With floating gate (epo)
Description: This subclass is indented under subclass E21.409. This subclass is substantially the same in scope as ECLA classification H01L21/336F.










Patents under this class:
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Patent Number Title Of Patent Date Issued
6291287 Method for producing a memory cell Sep. 18, 2001
6287916 Method for forming a semiconductor device using LPCVD nitride to protect floating gate from charge loss Sep. 11, 2001
6288431 Semiconductor device and a method of manufacturing the same Sep. 11, 2001
6284603 Flash memory cell structure with improved channel punch-through characteristics Sep. 4, 2001
6285054 Trenched gate non-volatile semiconductor device with the source/drain regions spaced from the trench by sidewall dopings Sep. 4, 2001
6281023 Completely encapsulated top electrode of a ferroelectric capacitor using a lead-enhanced encapsulation layer Aug. 28, 2001
6281103 Method for fabricating gate semiconductor Aug. 28, 2001
6281545 Multi-level, split-gate, flash memory cell Aug. 28, 2001
6282123 Method of fabricating, programming, and erasing a dual pocket two sided program/erase non-volatile memory cell Aug. 28, 2001
6277691 Method to fabricate a robust and reliable memory device Aug. 21, 2001
6274418 Method of manufacturing flash memory cell Aug. 14, 2001
6274430 Fabrication method for a high voltage electrical erasable programmable read only memory device Aug. 14, 2001
6274900 Semiconductor device architectures including UV transmissive nitride layers Aug. 14, 2001
6274901 Nonvolatile semiconductor memory device and method for fabricating the same Aug. 14, 2001
6271088 Method for fabricating a buried vertical split gate memory device with high coupling ratio Aug. 7, 2001
6271089 Method of manufacturing flash memory Aug. 7, 2001
6271090 Method for manufacturing flash memory device with dual floating gates and two bits per cell Aug. 7, 2001
6271091 Method of fabricating flash memory cell Aug. 7, 2001
6271561 Method for fabricating floating gate semiconductor devices with trench isolation structures and self aligned floating gates Aug. 7, 2001
6268247 Memory cell of the EEPROM type having its threshold set by implantation, and fabrication method Jul. 31, 2001
6262451 Electrode structure for transistors, non-volatile memories and the like Jul. 17, 2001
6262917 Structure of a flash memory device Jul. 17, 2001
6259130 High density flash memories with high capacitive-couping ratio and high speed operation Jul. 10, 2001
6255165 Nitride plug to reduce gate edge lifting Jul. 3, 2001
6255172 Electrically erasable non-volatile memory Jul. 3, 2001
6255691 Nonvolatile semiconductor memory device and manufacturing process thereof Jul. 3, 2001
6252271 Flash memory structure using sidewall floating gate and method for forming the same Jun. 26, 2001
6252273 Nonvolatile reprogrammable interconnect cell with FN tunneling device for programming and erase Jun. 26, 2001
6252275 Silicon-on-insulator non-volatile random access memory device Jun. 26, 2001
6252276 Non-volatile semiconductor memory device including assymetrically nitrogen doped gate oxide Jun. 26, 2001
6248626 Floating back gate electrically erasable programmable read-only memory (EEPROM) Jun. 19, 2001
6249021 Nonvolatile semiconductor memory device and method of manufacturing the same Jun. 19, 2001
6249028 Operable floating gate contact for SOI with high Vt well Jun. 19, 2001
6246089 P-channel EEPROM devices Jun. 12, 2001
6242774 Poly spacer split gate cell with extremely small cell size Jun. 5, 2001
6243289 Dual floating gate programmable read only memory cell structure and method for its fabrication and operation Jun. 5, 2001
6238978 Use of etch to blunt gate corners May. 29, 2001
6239009 Flash memory device and method for manufacturing the same May. 29, 2001
6235582 Method for forming flash memory cell May. 22, 2001
6235588 Method of manufacturing a memory point in BICMOS technology May. 22, 2001
6236081 AND-type non-volatile semiconductor memory device and method of manufacturing thereof May. 22, 2001
6236082 Floating gate semiconductor device with reduced erase voltage May. 22, 2001
6232179 Semiconductor device and method of manufacturing the same May. 15, 2001
6232180 Split gate flash memory cell May. 15, 2001
6232183 Method for fabricating a flash memory May. 15, 2001
6229176 Split gate flash with step poly to improve program speed May. 8, 2001
6225161 Fully recessed semiconductor method for low power applications with single wrap around buried drain region May. 1, 2001
6225659 Trenched gate semiconductor device and method for low power applications May. 1, 2001
6221715 Method of making polysilicon self-aligned to field isolation oxide Apr. 24, 2001
6218246 Fabrication method of triple polysilicon flash eeprom arrays Apr. 17, 2001

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