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Class Information
Number: 257/E21.422
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Multi-step process for the manufacture of unipolar device (epo) > Field-effect transistor (epo) > With an insulated gate (epo) > With floating gate (epo)
Description: This subclass is indented under subclass E21.409. This subclass is substantially the same in scope as ECLA classification H01L21/336F.

Patents under this class:
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Patent Number Title Of Patent Date Issued
6368915 Method of manufacturing a semiconductor device Apr. 9, 2002
6368917 Methods of fabricating floating gate semiconductor device with reduced erase voltage Apr. 9, 2002
6368984 Insulating film and method of forming the same Apr. 9, 2002
6365449 Process for making a non-volatile memory cell with a polysilicon spacer defined select gate Apr. 2, 2002
6365455 Flash memory process using polysilicon spacers Apr. 2, 2002
6365456 Process for manufacturing semiconductor integrated memory devices with cells matrix having virtual ground Apr. 2, 2002
6365929 Scalable tunnel oxide window with no isolation edges Apr. 2, 2002
6362045 Method to form non-volatile memory cells Mar. 26, 2002
6362047 Method of manufacturing EEPROM memory points Mar. 26, 2002
6362053 Flow process for producing non-volatile memories with differentiated removal of the sacrificial oxide Mar. 26, 2002
6358796 Method to fabricate a non-smiling effect structure in split-gate flash with self-aligned isolation Mar. 19, 2002
6358797 Method of forming a non-volatile memory cell Mar. 19, 2002
6358799 Nonvolatile semiconductor memory device and method for fabricating the same, and semiconductor integrated circuit device Mar. 19, 2002
6355523 Manufacturing process for making single polysilicon level flash EEPROM cell Mar. 12, 2002
6355525 Method of producing non-volatile semiconductor memory device having a floating gate with protruding conductive side-wall portions Mar. 12, 2002
6348378 Method of making a non-volatile semiconductor device with reduced program disturbance Feb. 19, 2002
6346441 Method of fabricating flash memory cell using two tilt implantation steps Feb. 12, 2002
6344393 Fully recessed semiconductor method for low power applications Feb. 5, 2002
6344403 Memory device and method for manufacture Feb. 5, 2002
6335549 EEPROM with high channel hot carrier injection efficiency Jan. 1, 2002
6333228 Method to improve the control of bird's beak profile of poly in split gate flash Dec. 25, 2001
6331463 Method for manufacturing low power high efficiency non-volatile erasable programmable memory cell structure Dec. 18, 2001
6331464 Method of fabricating a flash memory Dec. 18, 2001
6331721 Memory cell with built in erasure feature Dec. 18, 2001
6329240 Non-volatile memory cell and methods of fabricating and operating same Dec. 11, 2001
6329246 Method for fabricating flash memory Dec. 11, 2001
6329247 Nonvolatile semiconductor memory device and manufacturing method thereof Dec. 11, 2001
6329254 Memory cell of the EEPROM type having its threshold adjusted by implantation, and fabrication method Dec. 11, 2001
6329273 Solid-source doping for source/drain to eliminate implant damage Dec. 11, 2001
6329687 Two bit flash cell with two floating gate regions Dec. 11, 2001
6330187 Nonvolatile memory device and method for manufacturing the same Dec. 11, 2001
6323086 Flash memory structure using sidewall floating gate having one side thereof surrounded by control gate Nov. 27, 2001
6323088 Dual floating gate programmable read only memory cell structure and method for its fabrication an operation Nov. 27, 2001
6316298 Fabrication method for a flash memory device Nov. 13, 2001
6316315 Method for fabricating a memory cell having a MOS transistor Nov. 13, 2001
6316316 Method of forming high density and low power flash memories with a high capacitive-coupling ratio Nov. 13, 2001
6317360 Flash memory and methods of writing and erasing the same as well as a method of forming the same Nov. 13, 2001
6313498 Flash memory cell with thin floating gate with rounded side wall, and fabrication process Nov. 6, 2001
6313500 Split gate memory cell Nov. 6, 2001
6309907 Method of fabricating transistor with silicon oxycarbide gate Oct. 30, 2001
6309928 Split-gate flash cell Oct. 30, 2001
6303437 Trenched gate semiconductor method for low power applications Oct. 16, 2001
6303438 Method for manufacturing a nonvolatile semiconductor memory device having increased hot electron injection efficiency Oct. 16, 2001
6303439 Fabrication method for a two-bit flash memory cell Oct. 16, 2001
6303440 Nonvolatile semiconductor memory, and method of manufacturing the same Oct. 16, 2001
6303454 Process for a snap-back flash EEPROM cell Oct. 16, 2001
6303959 Semiconductor device having reduced source leakage during source erase Oct. 16, 2001
6297093 Method of making an electrically programmable memory cell Oct. 2, 2001
6297097 Method for forming a semiconductor memory device with increased coupling ratio Oct. 2, 2001
6294430 Nitridization of the pre-ddi screen oxide Sep. 25, 2001

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