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Class Information
Number: 257/E21.422
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Multi-step process for the manufacture of unipolar device (epo) > Field-effect transistor (epo) > With an insulated gate (epo) > With floating gate (epo)
Description: This subclass is indented under subclass E21.409. This subclass is substantially the same in scope as ECLA classification H01L21/336F.










Patents under this class:
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Patent Number Title Of Patent Date Issued
6492231 Method of making triple self-aligned split-gate non-volatile memory device Dec. 10, 2002
6489649 Semiconductor device having nonvolatile memory and method of manufacturing thereof Dec. 3, 2002
6486032 Method for fabricating control gate and floating gate of a flash memory cell Nov. 26, 2002
6482697 Method of forming a highly integrated non-volatile semiconductor memory device Nov. 19, 2002
6482708 Nonvolatile memory device and method for manufacturing the same Nov. 19, 2002
6483133 EEPROM with high channel hot carrier injection efficiency Nov. 19, 2002
6483159 Undoped polysilicon as the floating-gate of a split-gate flash cell Nov. 19, 2002
6479351 Method of fabricating a self-aligned non-volatile memory cell Nov. 12, 2002
6479858 Method and apparatus for a semiconductor device with adjustable threshold voltage Nov. 12, 2002
6475863 Method for fabricating self-aligned gate of flash memory cell Nov. 5, 2002
6477084 NROM cell with improved programming, erasing and cycling Nov. 5, 2002
6472273 Method of manufacturing a flash memory device Oct. 29, 2002
6472281 Method for fabricating semiconductor device using a CVD insulator film Oct. 29, 2002
6468887 Semiconductor device and a method of manufacturing the same Oct. 22, 2002
6465296 Vertical source/drain contact semiconductor Oct. 15, 2002
6465837 Scaled stack-gate non-volatile semiconductor memory device Oct. 15, 2002
6461984 Semiconductor device using N2O plasma oxide and a method of fabricating the same Oct. 8, 2002
6462372 Scaled stack-gate flash memory device Oct. 8, 2002
6462374 Semiconductor device and method for fabricating the same Oct. 8, 2002
6457108 Method of operating a system-on-a-chip including entering a standby state in a non-volatile memory while operating the system-on-a-chip from a volatile memory Sep. 24, 2002
6451652 Method for forming an EEPROM cell together with transistor for peripheral circuits Sep. 17, 2002
6448138 Nonvolatile floating-gate memory devices, and process of fabrication Sep. 10, 2002
6444525 Method for manufacturing a nonvolatile memory Sep. 3, 2002
6444554 Method of making a non-volatile memory and semiconductor device Sep. 3, 2002
6445032 Floating back gate electrically erasable programmable read-only memory(EEPROM) Sep. 3, 2002
6440796 Poly spacer split gate cell with extremely small cell size Aug. 27, 2002
6432773 Memory cell having an ONO film with an ONO sidewall and method of fabricating same Aug. 13, 2002
6429108 Non-volatile memory device with encapsulated tungsten gate and method of making same Aug. 6, 2002
6424001 Flash memory with ultra thin vertical body transistors Jul. 23, 2002
6420231 Processing techniques for making a dual floating gate EEPROM cell array Jul. 16, 2002
6420233 Split gate field effect transistor (FET) device employing non-linear polysilicon floating gate electrode dopant profile Jul. 16, 2002
6420249 Method for fabricating a floating gate semiconductor device Jul. 16, 2002
6414350 EPROM cell having a gate structure with dual side-wall spacers of differential composition Jul. 2, 2002
6413820 Method of forming a composite interpoly gate dielectric Jul. 2, 2002
6410389 Non-volatile memory cell with a single level of polysilicon, in particular of the flash EEPROM type, and method for manufacturing the same Jun. 25, 2002
6410956 Method and system for using a spacer to offset implant damage and reduce lateral diffusion in flash memory devices Jun. 25, 2002
6406960 Process for fabricating an ONO structure having a silicon-rich silicon nitride layer Jun. 18, 2002
6406961 Process for producing flash memory without mis-alignment of floating gate with field oxide Jun. 18, 2002
6403419 Method of manufacturing a flash memory device Jun. 11, 2002
6391716 Method for forming poly spacer electron tunnel oxide flash with electric-field enhancing corners for poly to poly erase May. 21, 2002
6387755 Method and system for providing localized gate edge rounding with minimal encroachment and gate edge lifting May. 14, 2002
6387756 Manufacturing method of non-volatile semiconductor device May. 14, 2002
6383870 Semiconductor device architectures including UV transmissive nitride layers May. 7, 2002
6384448 P-channel dynamic flash memory cells with ultrathin tunnel oxides May. 7, 2002
6380583 Method to increase coupling ratio of source to floating gate in split-gate flash Apr. 30, 2002
6380585 Nonvolatile semiconductor device capable of increased electron injection efficiency Apr. 30, 2002
6376875 Semiconductor component with compensation implantation Apr. 23, 2002
6372617 Method of manufacturing non-volatile memory Apr. 16, 2002
6373094 EEPROM cell using conventional process steps Apr. 16, 2002
6368911 Method for manufacturing a buried gate Apr. 9, 2002

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