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Class Information
Number: 257/E21.422
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Multi-step process for the manufacture of unipolar device (epo) > Field-effect transistor (epo) > With an insulated gate (epo) > With floating gate (epo)
Description: This subclass is indented under subclass E21.409. This subclass is substantially the same in scope as ECLA classification H01L21/336F.

Patents under this class:
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Patent Number Title Of Patent Date Issued
6580641 Method of forming and operating trench split gate non-volatile flash memory cell structure Jun. 17, 2003
6576950 EEPROM type non-volatile memory cell and corresponding production method Jun. 10, 2003
6573140 Process for making a dual bit memory device with isolated polysilicon floating gates Jun. 3, 2003
6569736 Method for fabricating square polysilicon spacers for a split gate flash memory device by multi-step polysilicon etch May. 27, 2003
6570212 Complementary avalanche injection EEPROM cell May. 27, 2003
6566705 Enhanced EPROM structures with accentuated hot electron generation regions May. 20, 2003
6563168 Non-volatile semiconductor device with anti-punch through regions May. 13, 2003
6559007 Method for forming flash memory device having a tunnel dielectric comprising nitrided oxide May. 6, 2003
6548355 EEPROM memory cell and corresponding manufacturing method Apr. 15, 2003
6544848 Method to form an asymmetrical non-volatile memory device using small in-situ doped polysilicon spacers Apr. 8, 2003
6545312 Nonvolatile semiconductor memory device and method for fabricating the same Apr. 8, 2003
6541815 High-density dual-cell flash memory structure Apr. 1, 2003
6537880 Method of fabricating a high density NAND stacked gate flash memory device having narrow pitch isolation and large capacitance between control and floating gates Mar. 25, 2003
6538275 Nonvolatile semiconductor memory device and method for fabricating the same Mar. 25, 2003
6538277 Split-gate flash cell Mar. 25, 2003
6534817 Contactless channel write/erase flash memory cell and its fabrication method Mar. 18, 2003
6534364 Tunnel diode layout for an EEPROM cell for protecting the tunnel diode region Mar. 18, 2003
6531733 Structure of flash memory cell and method for manufacturing the same Mar. 11, 2003
6528844 Split-gate flash memory cell with a tip in the middle of the floating gate Mar. 4, 2003
6524883 Quantum dot of single electron memory device and method for fabricating thereof Feb. 25, 2003
6524911 Combination of BPTEOS oxide film with CMP and RTA to achieve good data retention Feb. 25, 2003
6524914 Source side boron implanting and diffusing device architecture for deep sub 0.18 micron flash memory Feb. 25, 2003
6524915 Split-gate flash memory and method of manufacturing the same Feb. 25, 2003
6525377 Low threshold voltage MOS transistor and method of manufacture Feb. 25, 2003
6521526 Method of manufacturing flash memory Feb. 18, 2003
6521942 Electrically programmable memory cell Feb. 18, 2003
6521944 Split gate memory cell with a floating gate in the corner of a trench Feb. 18, 2003
6518072 Deposited screen oxide for reducing gate edge lifting Feb. 11, 2003
6518110 Method of fabricating memory cell structure of flash memory having annular floating gate Feb. 11, 2003
6518122 Low voltage programmable and erasable flash EEPROM Feb. 11, 2003
6518126 Method of forming and operating trench split gate non-volatile flash memory cell structure Feb. 11, 2003
6518618 Integrated memory cell and method of fabrication Feb. 11, 2003
6518620 EEPROM memory cell with increased dielectric integrity Feb. 11, 2003
6512691 Non-volatile memory embedded in a conventional logic process Jan. 28, 2003
6509237 Flash memory cell fabrication sequence Jan. 21, 2003
6509605 Flash memory cell having a flexible element Jan. 21, 2003
6506646 Method for manufacturing a semiconductor memory Jan. 14, 2003
6507066 Highly reliable flash memory structure with halo source Jan. 14, 2003
6503797 Nonvolatile semiconductor storage apparatus and production method of the same Jan. 7, 2003
6504755 Semiconductor memory device Jan. 7, 2003
6504756 Dual floating gate programmable read only memory cell structure and method for its fabrication and operation Jan. 7, 2003
6500711 Fabrication method for an interpoly dielectric layer Dec. 31, 2002
6501124 Non-volatile semiconductor memory device Dec. 31, 2002
6501685 Channel write/erase flash memory cell and its manufacturing method Dec. 31, 2002
6498084 Method of forming high density EEPROM cell Dec. 24, 2002
6495467 Method of fabricating a non-volatile memory device Dec. 17, 2002
6495880 Method to fabricate a flash memory cell with a planar stacked gate Dec. 17, 2002
6496416 Low voltage non-volatile memory cell Dec. 17, 2002
6492225 Method of fabricating enhanced EPROM structures with accentuated hot electron generation regions Dec. 10, 2002
6492228 Dual floating gate programmable read only memory cell structure and method for its fabrication and operation Dec. 10, 2002

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