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Class Information
Number: 257/E21.422
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Multi-step process for the manufacture of unipolar device (epo) > Field-effect transistor (epo) > With an insulated gate (epo) > With floating gate (epo)
Description: This subclass is indented under subclass E21.409. This subclass is substantially the same in scope as ECLA classification H01L21/336F.










Patents under this class:
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Patent Number Title Of Patent Date Issued
6759296 Method of manufacturing a flash memory cell Jul. 6, 2004
6756268 Modified source/drain re-oxidation method and system Jun. 29, 2004
6756269 Method for manufacturing nonvolatile semiconductor memory device Jun. 29, 2004
6753223 Method for fabricating flash memory cell Jun. 22, 2004
6753242 Integrated circuit device and method therefor Jun. 22, 2004
6753569 Method to fabricate a non-smiling effect structure in split-gate flash with self-aligned isolation Jun. 22, 2004
6750066 Precision high-K intergate dielectric layer Jun. 15, 2004
6750502 Technique to quench electrical defects in aluminum oxide film Jun. 15, 2004
6746901 Semiconductor device and method of fabricating thereof Jun. 8, 2004
6746920 Fabrication method of flash memory device with L-shaped floating gate Jun. 8, 2004
6744082 Static pass transistor logic with transistors with multiple vertical gates Jun. 1, 2004
6740925 Memory device comprising single transistor having functions of RAM and ROM and methods for operating and manufacturing the same May. 25, 2004
6734055 Multi-level (4 state/2-bit) stacked gate flash memory cell May. 11, 2004
6734490 Nonvolatile memory cell with high programming efficiency May. 11, 2004
6727545 Semiconductor memory array of floating gate memory cells with low resistance source regions and high source coupling Apr. 27, 2004
6723638 Performance in flash memory devices Apr. 20, 2004
6720218 Method for manufacturing horizontal surrounding gate flash memory cell Apr. 13, 2004
6721205 Nonvolatile semiconductor memory device and methods for operating and producing the same Apr. 13, 2004
6716701 Method of manufacturing a semiconductor memory device Apr. 6, 2004
6713336 Flash memory device and method for fabricating the same Mar. 30, 2004
6713388 Method of fabricating a non-volatile memory device to eliminate charge loss Mar. 30, 2004
6713809 Dual bit memory device with isolated polysilicon floating gates Mar. 30, 2004
6713810 Non-volatile devices, and electronic systems comprising non-volatile devices Mar. 30, 2004
6713812 Non-volatile memory device having an anti-punch through (APT) region Mar. 30, 2004
6713824 Reliable semiconductor device and method of manufacturing the same Mar. 30, 2004
6709921 Fabrication method for a flash memory device with a split floating gate and a structure thereof Mar. 23, 2004
6711060 Non-volatile semiconductor memory and methods of driving, operating, and manufacturing this memory Mar. 23, 2004
6707113 Semiconductor device with crenellated channel Mar. 16, 2004
6706599 Multi-bit non-volatile memory device and method therefor Mar. 16, 2004
6706613 Methods for manufacturing stacked gates including oxide/nitride/oxide (ONO) interlayer dielectrics using pre-annealing and/or post-annealing in nitrogen Mar. 16, 2004
6703298 Self-aligned process for fabricating memory cells with two isolated floating gates Mar. 9, 2004
6703659 Low voltage programmable and erasable flash EEPROM Mar. 9, 2004
6700159 Semiconductor device comprising trench-isolated transistors Mar. 2, 2004
6693009 Flash memory cell with minimized floating gate to drain/source overlap for minimizing charge leakage Feb. 17, 2004
6693010 Split gate memory cell with a floating gate in the corner of a trench Feb. 17, 2004
6693321 Replacing layers of an intergate dielectric layer with high-K material for improved scalability Feb. 17, 2004
6686622 Semiconductor memory device and manufacturing method thereof Feb. 3, 2004
6686623 Nonvolatile memory and electronic apparatus Feb. 3, 2004
6680225 Method for manufacturing a semiconductor memory Jan. 20, 2004
6680244 Method for manufacturing semiconductor device Jan. 20, 2004
6677198 Structure of a low-voltage channel write/erase flash memory cell and fabricating method thereof Jan. 13, 2004
6677204 Multigate semiconductor device with vertical channel current and method of fabrication Jan. 13, 2004
6677255 Method for removing fences without reduction of ONO film thickness Jan. 13, 2004
6673674 Method of manufacturing a semiconductor device having a T-shaped floating gate Jan. 6, 2004
RE38370 Deposited tunneling oxide Dec. 30, 2003
6671205 Low voltage non-volatile memory cell Dec. 30, 2003
6667201 Method for manufacturing flash memory cell Dec. 23, 2003
6667508 Nonvolatile memory having a split gate Dec. 23, 2003
6660585 Stacked gate flash memory cell with reduced disturb conditions Dec. 9, 2003
6660588 High density floating gate flash memory and fabrication processes therefor Dec. 9, 2003

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