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Class Information
Number: 257/E21.421
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Multi-step process for the manufacture of unipolar device (epo) > Field-effect transistor (epo) > With an insulated gate (epo) > With multiple gate, one gate having mos structure and others having same or a different structure, i.e., non mos, e.g., jfet gate (epo)
Description: This subclass is indented under subclass E21.409. This subclass is substantially the same in scope as ECLA classification H01L21/336E.










Patents under this class:
1 2 3 4 5

Patent Number Title Of Patent Date Issued
8691640 Methods of forming dielectrically isolated fins for a FinFET semiconductor by performing an etching process wherein the etch rate is modified via inclusion of a dopant material Apr. 8, 2014
8691652 Semiconductor process Apr. 8, 2014
8685810 Power layout for integrated circuits Apr. 1, 2014
8679924 Self-aligned multiple gate transistor formed on a bulk substrate Mar. 25, 2014
8679925 Methods of manufacturing semiconductor devices and transistors Mar. 25, 2014
8674360 Semiconductor device having first gate electrode and second gate electrode Mar. 18, 2014
8664029 Process for fabricating a capacitance type tri-axial accelerometer Mar. 4, 2014
8664060 Semiconductor structure and method of fabricating the same Mar. 4, 2014
8658490 Passivating point defects in high-K gate dielectric layers during gate stack formation Feb. 25, 2014
8658505 Embedded stressors for multigate transistor devices Feb. 25, 2014
8652889 Fin-transistor formed on a patterned STI region by late fin etch Feb. 18, 2014
RE44730 Method of manufacturing a MOSFET structure Jan. 28, 2014
8633076 Method for adjusting fin width in integrated circuitry Jan. 21, 2014
8633530 Semiconductor device and method of manufacturing the same Jan. 21, 2014
8629024 Methods of manufacturing semiconductor devices and transistors Jan. 14, 2014
8618668 Semiconductor contact barrier Dec. 31, 2013
8598653 FinFET having cross-hair cells Dec. 3, 2013
8597993 Electrostatic discharge (ESD) device and method of fabricating Dec. 3, 2013
8563374 Strained semiconductor devices having asymmetrical heterojunction structures and methods for the fabrication thereof Oct. 22, 2013
8557665 Self-aligned metal-semiconductor alloy and metallization for sub-lithographic source and drain contacts Oct. 15, 2013
8541279 Method for manufacturing a semiconductor device having high-voltage and low-voltage transistors Sep. 24, 2013
8525234 Formation of FinFET gate spacer Sep. 3, 2013
8524552 Normally-off power JFET and manufacturing method thereof Sep. 3, 2013
8518767 FinFET with reduced gate to fin overlay sensitivity Aug. 27, 2013
8518799 Process of making semiconductor on glass substrates with a stiffening layer Aug. 27, 2013
8519476 Method of forming a self-aligned charge balanced power DMOS Aug. 27, 2013
8513107 Replacement gate FinFET devices and methods for forming the same Aug. 20, 2013
8492210 Transistor, semiconductor device comprising the transistor and method for manufacturing the same Jul. 23, 2013
8487363 Method for manufacturing semiconductor device Jul. 16, 2013
8481380 Asymmetric wedge JFET, related method and design structure Jul. 9, 2013
8421082 Integrated CMOS and MEMS with air dielectric method and system Apr. 16, 2013
8421156 FET with self-aligned back gate Apr. 16, 2013
8421205 Power layout for integrated circuits Apr. 16, 2013
8404545 Tunnel field-effect transistor with gated tunnel barrier Mar. 26, 2013
8399957 Dual-depth self-aligned isolation structure for a back gate electrode Mar. 19, 2013
8395252 Integrated MEMS and CMOS package and method Mar. 12, 2013
8390064 Semiconductor device having gate trenches and manufacturing method thereof Mar. 5, 2013
8390074 Structure and method for latchup improvement using through wafer via latchup guard ring Mar. 5, 2013
8377779 Methods of manufacturing semiconductor devices and transistors Feb. 19, 2013
8373165 Semiconductor integrated circuit device and a method of fabricating the same Feb. 12, 2013
8373210 Semiconductor device and semiconductor device manufacturing method Feb. 12, 2013
8354698 VDMOS and JFET integrated semiconductor device Jan. 15, 2013
8324057 Method for fabricating asymmetric double-gate transistors by which asymmetric and symmetric double-gate transistors can be made on the same substrate Dec. 4, 2012
8313999 Multi-gate semiconductor device with self-aligned epitaxial source and drain Nov. 20, 2012
8314464 Semiconductor device and manufacturing method thereof Nov. 20, 2012
8309410 Power MOSFET with a gate structure of different material Nov. 13, 2012
8304310 Manufacture method of semiconductor device Nov. 6, 2012
8299527 Vertical LDMOS device and method for fabricating same Oct. 30, 2012
8299565 Semiconductor nanowires having mobility-optimized orientations Oct. 30, 2012
8293602 Method of fabricating a finFET having cross-hair cells Oct. 23, 2012

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