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Class Information
Number: 257/E21.42
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Multi-step process for the manufacture of unipolar device (epo) > Field-effect transistor (epo) > With an insulated gate (epo) > With channel containing layer, e.g., p-base, fo rmed in or on drain region, e.g., dmos transistor (epo) > Vertical power dmos transistor (epo) > With recess formed by etching in source/base contact region (epo)
Description: This subclass is indented under subclass E21.418. This subclass is substantially the same in scope as ECLA classification H01L21/336B2B.










Patents under this class:
1 2 3

Patent Number Title Of Patent Date Issued
8609492 Vertical memory cell Dec. 17, 2013
8450814 Extended drain lateral DMOS transistor with reduced gate charge and self-aligned extended drain May. 28, 2013
8299455 Semiconductor structures having improved contact resistance Oct. 30, 2012
8237195 Power MOSFET having a strained channel in a semiconductor heterostructure on metal substrate Aug. 7, 2012
8216928 Methods for fabricating semiconductor devices having local contacts Jul. 10, 2012
8129779 Trench gate type VDMOSFET device with thicker gate insulation layer portion for reducing gate to source capacitance Mar. 6, 2012
8071481 Method for forming highly strained source/drain trenches Dec. 6, 2011
8035159 Device structure and manufacturing method using HDP deposited source-body implant block Oct. 11, 2011
7964897 Direct contact to area efficient body tie process flow Jun. 21, 2011
7939410 Semiconductor device and manufacturing method thereof May. 10, 2011
7858529 Treatment method of semiconductor, method for manufacturing MOS, and MOS structure Dec. 28, 2010
7847329 Vertical MOSFET transistor, in particular operating as a selector in nonvolatile memory devices Dec. 7, 2010
7696019 Semiconductor devices and methods of manufacturing thereof Apr. 13, 2010
7531876 Semiconductor device having power semiconductor elements May. 12, 2009
7494884 SiGe selective growth without a hard mask Feb. 24, 2009
7320916 Manufacturing method of semiconductor device Jan. 22, 2008
7312133 Method of manufacturing semiconductor device Dec. 25, 2007
7247562 Semiconductor element, semiconductor device and methods for manufacturing thereof Jul. 24, 2007
7115470 Methods of fabricating flash memory cell having split-gate structure using spacer oxidation process Oct. 3, 2006
6955970 Process for manufacturing a low voltage MOSFET power device having a minimum figure of merit Oct. 18, 2005
6939776 Semiconductor device and a method of fabricating the same Sep. 6, 2005
6927101 Field-effect-controllable semiconductor component and method for fabricating the component Aug. 9, 2005
6919241 Superjunction device and process for its manufacture Jul. 19, 2005
6846706 Power MOSFET with ultra-deep base and reduced on resistance Jan. 25, 2005
6833298 Method for fabricating a semiconductor component having at least one transistor cell and an edge cell Dec. 21, 2004
6781203 MOSFET with reduced threshold voltage and on resistance and process for its manufacture Aug. 24, 2004
6762455 Semiconductor component for high reverse voltages in conjunction with a low on resistance and method for fabricating a semiconductor component Jul. 13, 2004
6756644 Ultra low QGD power MOSFET Jun. 29, 2004
6707103 Low voltage rad hard MOSFET Mar. 16, 2004
6703292 Method of making a semiconductor wafer having a depletable multiple-region semiconductor material Mar. 9, 2004
6686614 Semiconductor switching element with integrated Schottky diode and process for producing the switching element and diode Feb. 3, 2004
6649459 Method for manufacturing a semiconductor component Nov. 18, 2003
6649973 Semiconductor device and method for manufacturing the same Nov. 18, 2003
6649974 Field-effect controlled semiconductor device having a non-overlapping gate electrode and drift region and its manufacturing method Nov. 18, 2003
6639276 Power MOSFET with ultra-deep base and reduced on resistance Oct. 28, 2003
6630711 Semiconductor structures with trench contacts Oct. 7, 2003
6534830 Low impedance VDMOS semiconductor component Mar. 18, 2003
6437399 Semiconductor structures with trench contacts Aug. 20, 2002
6426248 Process for forming power MOSFET device in float zone, non-epitaxial silicon Jul. 30, 2002
6376311 Vertical double diffused MOSFET and method for manufacturing same Apr. 23, 2002
6346726 Low voltage MOSFET power device having a minimum figure of merit Feb. 12, 2002
6337499 Semiconductor component Jan. 8, 2002
6248620 Method for fabricating a field effect-controlled semiconductor component Jun. 19, 2001
6229178 Vertical double diffused MOSFET and method for manufacturing same May. 8, 2001
6225643 SOI cell and method for producing it May. 1, 2001
6214673 Process for forming vertical semiconductor device having increased source contact area Apr. 10, 2001
6211018 Method for fabricating high density trench gate type power device Apr. 3, 2001
6207974 Process for manufacture of a p-channel MOS gated device with base implant through the contact window Mar. 27, 2001
6194760 Double-diffused MOS transistor and method of fabricating the same Feb. 27, 2001
6188105 High density MOS-gated power device and process for forming same Feb. 13, 2001

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