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Class Information
Number: 257/E21.419
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Multi-step process for the manufacture of unipolar device (epo) > Field-effect transistor (epo) > With an insulated gate (epo) > With channel containing layer, e.g., p-base, fo rmed in or on drain region, e.g., dmos transistor (epo) > Vertical power dmos transistor (epo) > With recessed gate (epo)
Description: This subclass is indented under subclass E21.418. This subclass is substantially the same in scope as ECLA classification H01L21/336B2R.










Patents under this class:
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Patent Number Title Of Patent Date Issued
8709895 Manufacturing method power semiconductor device Apr. 29, 2014
8703563 Source and body contact structure for trench-DMOS devices using polysilicon Apr. 22, 2014
8685822 Semiconductor component and method of manufacture Apr. 1, 2014
8643090 Semiconductor devices and methods for manufacturing a semiconductor device Feb. 4, 2014
8629505 Semiconductor device Jan. 14, 2014
8629020 Semiconductor device and method of fabricating the same Jan. 14, 2014
8618601 Shielded gate trench MOSFET with increased source-metal contact Dec. 31, 2013
8592893 Power semiconductor device Nov. 26, 2013
8551821 Enhancement normally off nitride semiconductor device manufacturing the same Oct. 8, 2013
8541837 Semiconductor field effect power switching device Sep. 24, 2013
8507978 Split-gate structure in trench-based silicon carbide power device Aug. 13, 2013
8502305 Semiconductor device and method for manufacturing same Aug. 6, 2013
8502313 Double layer metal (DLM) power MOSFET Aug. 6, 2013
8502314 Multi-level options for power MOSFETS Aug. 6, 2013
8492226 Trench transistor Jul. 23, 2013
8486784 Vertical semiconductor device and method of manufacturing the same Jul. 16, 2013
8476701 Semiconductor device with gate electrode including a concave portion Jul. 2, 2013
8441067 Power device with low parasitic transistor and method of making the same May. 14, 2013
8426275 Fabrication method of trenched power MOSFET Apr. 23, 2013
8421147 MOS transistor with elevated gate drain capacity Apr. 16, 2013
8399325 Method for producing an electrode structure Mar. 19, 2013
8389363 Methods of forming field effect transistors, methods of forming field effect transistor gates, methods of forming integrated circuitry comprising a transistor gate array and circuitry peripher Mar. 5, 2013
8383501 Vertical field effect transistor arrays and methods for fabrication thereof Feb. 26, 2013
8373223 Semiconductor device and method for fabricating the same Feb. 12, 2013
8361865 Method of manufacturing a semiconductor device having vertical MOSFET Jan. 29, 2013
8354713 Method of fabricating semiconductor device Jan. 15, 2013
8330215 Transistor including bulb-type recess channel and method for fabricating the same Dec. 11, 2012
8313995 Method for manufacturing a semiconductor device Nov. 20, 2012
8304829 Trench-based power semiconductor devices with increased breakdown voltage characteristics Nov. 6, 2012
8298893 Method for manufacturing semiconductor device having multi-layered contact Oct. 30, 2012
8288230 Method for producing a gate electrode structure Oct. 16, 2012
8268688 Production of VDMOS-transistors having optimized gate contact Sep. 18, 2012
8237195 Power MOSFET having a strained channel in a semiconductor heterostructure on metal substrate Aug. 7, 2012
8232166 Method for fabricating semiconductor device with recess gate Jul. 31, 2012
8198157 Methods of forming non-volatile memory devices including dummy word lines Jun. 12, 2012
8187939 Direct contact in trench with three-mask shield gate process May. 29, 2012
8148749 Trench-shielded semiconductor device Apr. 3, 2012
8143125 Structure and method for forming a salicide on the gate electrode of a trench-gate FET Mar. 27, 2012
8080457 Fabrication method of power semiconductor structure with low gate charge Dec. 20, 2011
8076202 Method of fabricating semiconductor device Dec. 13, 2011
8053315 Method to manufacture split gate with high density plasma oxide layer as inter-polysilicon insulation layer Nov. 8, 2011
8048742 Transistor including bulb-type recess channel and method for fabricating the same Nov. 1, 2011
8049273 Semiconductor device for improving the peak induced voltage in switching converter Nov. 1, 2011
8034701 Methods of forming recessed gate electrodes having covered layer interfaces Oct. 11, 2011
8012828 Recess gate transistor Sep. 6, 2011
7955930 Semiconductor device and manufacturing method thereof Jun. 7, 2011
7951661 Semiconductor device and method of fabricating the same May. 31, 2011
7952137 Trench semiconductor device and method of making the same May. 31, 2011
7948031 Semiconductor device and method of fabricating semiconductor device May. 24, 2011
7939410 Semiconductor device and manufacturing method thereof May. 10, 2011

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