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Class Information
Number: 257/E21.418
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Multi-step process for the manufacture of unipolar device (epo) > Field-effect transistor (epo) > With an insulated gate (epo) > With channel containing layer, e.g., p-base, fo rmed in or on drain region, e.g., dmos transistor (epo) > Vertical power dmos transistor (epo)
Description: This subclass is indented under subclass E21.417. This subclass is substantially the same in scope as ECLA classification H01L21/336B2.

Sub-classes under this class:

Class Number Class Name Patents
257/E21.42 With recess formed by etching in source/base contact region (epo) 117
257/E21.419 With recessed gate (epo) 553

Patents under this class:
1 2 3 4 5 6 7 8 9

Patent Number Title Of Patent Date Issued
8704291 Semiconductor device and method for fabricating the same Apr. 22, 2014
8685810 Power layout for integrated circuits Apr. 1, 2014
8680607 Trench gated power device with multiple trench width and its fabrication process Mar. 25, 2014
8664714 Power MOSFET Mar. 4, 2014
8643136 High voltage device and manufacturing method thereof Feb. 4, 2014
8643090 Semiconductor devices and methods for manufacturing a semiconductor device Feb. 4, 2014
8604541 Structure and fabrication process of super junction MOSFET Dec. 10, 2013
8564060 Semiconductor device with large blocking voltage and manufacturing method thereof Oct. 22, 2013
8530300 Semiconductor device with drift regions and compensation regions Sep. 10, 2013
8513730 Semiconductor component with vertical structures having a high aspect ratio and method Aug. 20, 2013
8513734 Switch mode converter employing dual gate MOS transistor Aug. 20, 2013
8507986 Silicon-carbide MOSFET cell structure and method for forming same Aug. 13, 2013
8492226 Trench transistor Jul. 23, 2013
8492254 Method of manufacturing semiconductor devices Jul. 23, 2013
8486784 Vertical semiconductor device and method of manufacturing the same Jul. 16, 2013
8466510 Staggered column superjunction Jun. 18, 2013
8461648 Semiconductor component with a drift region and a drift control region Jun. 11, 2013
8455318 Process for manufacturing a power semiconductor device having charge-balance columnar structures on a non-planar surface, and corresponding power semiconductor device Jun. 4, 2013
8450814 Extended drain lateral DMOS transistor with reduced gate charge and self-aligned extended drain May. 28, 2013
8421196 Semiconductor device and manufacturing method Apr. 16, 2013
8421205 Power layout for integrated circuits Apr. 16, 2013
8378413 Semiconductor device and method for fabricating the same Feb. 19, 2013
8377756 Silicon-carbide MOSFET cell structure and method for forming same Feb. 19, 2013
8350322 Semiconductor device and method for manufacturing the same Jan. 8, 2013
8330217 Devices, methods, and systems with MOS-gated trench-to-trench lateral current flow Dec. 11, 2012
8319225 Display device and manufacturing method thereof Nov. 27, 2012
8309410 Power MOSFET with a gate structure of different material Nov. 13, 2012
8304326 Edge seal for a semiconductor device and method therefor Nov. 6, 2012
8298889 Process of forming an electronic device including a trench and a conductive structure therein Oct. 30, 2012
8294203 Contacting and filling deep-trench-isolation with tungsten Oct. 23, 2012
8288220 Methods of forming semiconductor devices including epitaxial layers and related structures Oct. 16, 2012
8283723 MOS device with low injection diode Oct. 9, 2012
8278710 Guard ring integrated LDMOS Oct. 2, 2012
8237268 Module comprising a semiconductor chip Aug. 7, 2012
8178409 Semiconductor device with alternately arranged P-type and N-type thin semiconductor layers and method for manufacturing the same May. 15, 2012
8159024 High voltage (>100V) lateral trench power MOSFET with low specific-on-resistance Apr. 17, 2012
8119471 Semiconductor device and method for manufacturing the same Feb. 21, 2012
8097936 Component, power component, apparatus, method of manufacturing a component, and method of manufacturing a power semiconductor component Jan. 17, 2012
8093640 Method and system for incorporating high voltage devices in an EEPROM Jan. 10, 2012
8076725 Semiconductor device and method for manufacturing the same Dec. 13, 2011
8049273 Semiconductor device for improving the peak induced voltage in switching converter Nov. 1, 2011
8012832 Process for manufacturing a multi-drain electronic power device integrated in semiconductor substrate and corresponding device Sep. 6, 2011
8004049 Power semiconductor device Aug. 23, 2011
7994005 High-mobility trench MOSFETs Aug. 9, 2011
7943988 Power MOSFET with a gate structure of different material May. 17, 2011
7936010 Power semiconductor having a lightly doped drift and buffer layer May. 3, 2011
7910991 Dual gate lateral diffused MOS transistor Mar. 22, 2011
7910985 Semiconductor device and method for fabricating the same Mar. 22, 2011
7897459 Semiconductor device and manufacturing method thereof Mar. 1, 2011
7892924 Method for making a charge balanced multi-nano shell drift region for superjunction semiconductor device Feb. 22, 2011

1 2 3 4 5 6 7 8 9

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