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Class Information
Number: 257/E21.417
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Multi-step process for the manufacture of unipolar device (epo) > Field-effect transistor (epo) > With an insulated gate (epo) > With channel containing layer, e.g., p-base, fo rmed in or on drain region, e.g., dmos transistor (epo)
Description: This subclass is indented under subclass E21.409. This subclass is substantially the same in scope as ECLA classification H01L21/336B.

Sub-classes under this class:

Class Number Class Name Patents
257/E21.418 Vertical power dmos transistor (epo) 409

Patents under this class:
1 2 3 4 5

Patent Number Title Of Patent Date Issued
6468847 Method of fabricating a high-voltage transistor Oct. 22, 2002
6465869 Compensation component and process for producing the compensation component Oct. 15, 2002
6452222 MIS type semiconductor device and method for manufacturing the same Sep. 17, 2002
6448620 Semiconductor device and process for producing the same Sep. 10, 2002
6445038 Silicon on insulator high-voltage switch Sep. 3, 2002
6426258 Method of manufacturing a semiconductor integrated circuit device Jul. 30, 2002
6424005 LDMOS power device with oversized dwell Jul. 23, 2002
6399468 Semiconductor device and method of manufacturing the same Jun. 4, 2002
6373110 Semiconductor device having high breakdown voltage Apr. 16, 2002
6346451 Laterial thin-film silicon-on-insulator (SOI) device having a gate electrode and a field plate electrode Feb. 12, 2002
6313489 Lateral thin-film silicon-on-insulator (SOI) device having a lateral drift region with a retrograde doping profile, and method of making such a device Nov. 6, 2001
6310378 High voltage thin film transistor with improved on-state characteristics and method for making same Oct. 30, 2001
6303954 Semiconductor device with a high-voltage component in semiconductor on insulator Oct. 16, 2001
6242787 Semiconductor device and manufacturing method thereof Jun. 5, 2001
6236084 Semiconductor integrated circuit device having double diffusion insulated gate field effect transistor May. 22, 2001
6215152 MOSFET having self-aligned gate and buried shield and method of making same Apr. 10, 2001
6207994 High-voltage transistor with multi-layer conduction region Mar. 27, 2001
6190978 Method for fabricating lateral RF MOS devices with enhanced RF properties Feb. 20, 2001
6171912 Method of manufacturing a semiconductor device comprising a field effect transistor Jan. 9, 2001
6168983 Method of making a high-voltage transistor with multiple lateral conduction layers Jan. 2, 2001
6153451 Transistor with increased operating voltage and method of fabrication Nov. 28, 2000
6150697 Semiconductor apparatus having high withstand voltage Nov. 21, 2000
6140183 Method of fabricating semiconductor device Oct. 31, 2000
6110803 Method for fabricating a high-bias device Aug. 29, 2000
6103578 Method for forming high breakdown semiconductor device Aug. 15, 2000
6096606 Method of making a semiconductor device Aug. 1, 2000
6093588 Process for fabricating a high voltage MOSFET Jul. 25, 2000
6072215 Semiconductor device including lateral MOS element Jun. 6, 2000
6071781 Method of fabricating lateral MOS transistor Jun. 6, 2000
6048772 Method for fabricating a lateral RF MOS device with an non-diffusion source-backside connection Apr. 11, 2000
6040601 High voltage device Mar. 21, 2000
6040600 Trenched high breakdown voltage semiconductor device Mar. 21, 2000
6025237 Methods of forming field effect transistors having graded drain region doping profiles therein Feb. 15, 2000
6022778 Process for the manufacturing of integrated circuits comprising low-voltage and high-voltage DMOS-technology power devices and non-volatile memory cells Feb. 8, 2000
5994189 High withstand voltage semiconductor device and manufacturing method thereof Nov. 30, 1999
5981997 Horizontal field effect transistor and method of manufacturing the same Nov. 9, 1999
5966608 Method of forming high voltage device Oct. 12, 1999
5905284 Semiconductor device with a particular DMISFET structure May. 18, 1999
5869875 Lateral diffused MOS transistor with trench source contact Feb. 9, 1999
5844275 High withstand-voltage lateral MOSFET with a trench and method of producing the same Dec. 1, 1998
5841166 Lateral DMOS transistor for RF/microwave applications Nov. 24, 1998
5825065 Low voltage DMOS transistor Oct. 20, 1998
5821144 Lateral DMOS transistor for RF/microwave applications Oct. 13, 1998
5817551 Semiconductor device and method of manufacturing the same Oct. 6, 1998
5811850 LDMOS transistors, systems and methods Sep. 22, 1998
5804864 High withstand voltage semiconductor device and manufacturing method thereof Sep. 8, 1998
5786252 Method of manufacturing a semiconductor device, and semiconductor device manufactured by such a method Jul. 28, 1998
5739061 Method of manufacturing a semiconductor device using gate side wall as mask for self-alignment Apr. 14, 1998
5736766 Medium voltage LDMOS device and method of fabrication Apr. 7, 1998
5719421 DMOS transistor with low on-resistance and method of fabrication Feb. 17, 1998

1 2 3 4 5

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