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Class Information
Number: 257/E21.417
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Multi-step process for the manufacture of unipolar device (epo) > Field-effect transistor (epo) > With an insulated gate (epo) > With channel containing layer, e.g., p-base, fo rmed in or on drain region, e.g., dmos transistor (epo)
Description: This subclass is indented under subclass E21.409. This subclass is substantially the same in scope as ECLA classification H01L21/336B.










Sub-classes under this class:

Class Number Class Name Patents
257/E21.418 Vertical power dmos transistor (epo) 409


Patents under this class:
1 2 3 4 5

Patent Number Title Of Patent Date Issued
6958515 N-channel LDMOS with buried p-type region to prevent parasitic bipolar effects Oct. 25, 2005
6921701 Method of manufacturing and structure of semiconductor device (DEMOS) with field oxide structure Jul. 26, 2005
6909155 Semiconductor on insulator device Jun. 21, 2005
6900101 LDMOS transistors and methods for making the same May. 31, 2005
6885067 SOI semiconductor device Apr. 26, 2005
6884686 Method of manufacturing and structure of semiconductor device with floating ring structure Apr. 26, 2005
6876035 High voltage N-LDMOS transistors having shallow trench isolation region Apr. 5, 2005
6869847 Semiconductor device manufacturing method thereof Mar. 22, 2005
6870218 Integrated circuit structure with improved LDMOS design Mar. 22, 2005
6867457 Semiconductor device and liquid jetting device using the same Mar. 15, 2005
6853034 Semiconductor device exhibiting a high breakdown voltage and the method of manufacturing the same Feb. 8, 2005
6852598 Method for the fabrication of a DMOS transistor Feb. 8, 2005
6836001 Semiconductor device having epitaxially-filled trench and method for manufacturing semiconductor device having epitaxially-filled trench Dec. 28, 2004
6831331 Power MOS transistor for absorbing surge current Dec. 14, 2004
6828631 High-voltage transistor with multi-layer conduction region Dec. 7, 2004
6825531 Lateral DMOS transistor with a self-aligned drain region Nov. 30, 2004
6825543 Semiconductor device, method for manufacturing the same, and liquid jet apparatus Nov. 30, 2004
6812522 Lateral type power MOS transistor having trench gate formed on silicon-on-insulator (SOI) substrate Nov. 2, 2004
6803317 Method of making a vertical gate semiconductor device Oct. 12, 2004
6800903 High-voltage transistor with multi-layer conduction region Oct. 5, 2004
6800917 Bladed silicon-on-insulator semiconductor devices and method of making Oct. 5, 2004
6800528 Method of fabricating LDMOS semiconductor devices Oct. 5, 2004
6797547 Bladed silicon-on-insulator semiconductor devices and method of making Sep. 28, 2004
6787437 Method of making a high-voltage transistor with buried conduction regions Sep. 7, 2004
6780722 Field effect transistor on insulating layer and manufacturing method Aug. 24, 2004
6780697 Method of manufacturing lateral double-diffused metal oxide semiconductor device Aug. 24, 2004
6777749 High-voltage transistor with multi-layer conduction region Aug. 17, 2004
6768172 High-voltage transistor with multi-layer conduction region Jul. 27, 2004
6768171 High-voltage transistor with JFET conduction channels Jul. 27, 2004
6759289 Method of fabricating a high-voltage transistor Jul. 6, 2004
6750513 Semiconductor device for driving plasma display panel Jun. 15, 2004
6730962 Method of manufacturing and structure of semiconductor device with field oxide structure May. 4, 2004
6724041 Method of making a high-voltage transistor with buried conduction regions Apr. 20, 2004
6699740 Method for manufacturing a lateral double-diffused MOS transistor having stable characteristics and equal drift length Mar. 2, 2004
6696323 Method of manufacturing semiconductor device having trench filled up with gate electrode Feb. 24, 2004
6677642 Field effect transistor structure and method of manufacture Jan. 13, 2004
6670685 Method of manufacturing and structure of semiconductor device with floating ring structure Dec. 30, 2003
6664593 Field effect transistor structure and method of manufacture Dec. 16, 2003
6639277 High-voltage transistor with multi-layer conduction region Oct. 28, 2003
6633065 High-voltage transistor with multi-layer conduction region Oct. 14, 2003
6624470 Semiconductor device and a method for manufacturing same Sep. 23, 2003
6580131 LDMOS device with double N-layering and process for its manufacture Jun. 17, 2003
6570219 High-voltage transistor with multi-layer conduction region May. 27, 2003
6570229 Semiconductor device May. 27, 2003
6559504 Lateral double diffused MOS transistor May. 6, 2003
6525375 Semiconductor device having trench filled up with gate electrode Feb. 25, 2003
6509220 Method of fabricating a high-voltage transistor Jan. 21, 2003
6489190 Method of fabricating a high-voltage transistor Dec. 3, 2002
6486034 Method of forming LDMOS device with double N-layering Nov. 26, 2002
6468870 Method of fabricating a LDMOS transistor Oct. 22, 2002

1 2 3 4 5










 
 
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