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Class Information
Number: 257/E21.417
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Multi-step process for the manufacture of unipolar device (epo) > Field-effect transistor (epo) > With an insulated gate (epo) > With channel containing layer, e.g., p-base, fo rmed in or on drain region, e.g., dmos transistor (epo)
Description: This subclass is indented under subclass E21.409. This subclass is substantially the same in scope as ECLA classification H01L21/336B.

Sub-classes under this class:

Class Number Class Name Patents
257/E21.418 Vertical power dmos transistor (epo) 409

Patents under this class:
1 2 3 4 5

Patent Number Title Of Patent Date Issued
8084817 Semiconductor device and method for fabricating the same Dec. 27, 2011
8076725 Semiconductor device and method for manufacturing the same Dec. 13, 2011
8067801 Semiconductor device and method of manufacturing the same Nov. 29, 2011
8053835 Lateral semiconductor device comprising two layers of mutually opposite conductivity-type materials between source and drain Nov. 8, 2011
8049273 Semiconductor device for improving the peak induced voltage in switching converter Nov. 1, 2011
7998819 Lateral drain MOSFET with improved clamping voltage control Aug. 16, 2011
7998849 Semiconductor device used as high-speed switching device and power device Aug. 16, 2011
7986004 Semiconductor device and method of manufacture thereof Jul. 26, 2011
7977715 LDMOS devices with improved architectures Jul. 12, 2011
7968412 Manufacturing process of a vertical-conduction MISFET device with gate dielectric structure having differentiated thickness and vertical-conduction MISFET device thus manufacture Jun. 28, 2011
7943988 Power MOSFET with a gate structure of different material May. 17, 2011
7927939 Method of manufacturing a laterally diffused metal oxide semiconductor device Apr. 19, 2011
7927940 Method of manufacturing a laterally diffused metal oxide semiconductor device Apr. 19, 2011
7902020 Semiconductor device and method of manufacturing the same Mar. 8, 2011
7888222 Method of fabricating a lateral double-diffused MOSFET Feb. 15, 2011
7871888 Method of manufacturing semiconductor device Jan. 18, 2011
7851314 Short channel lateral MOSFET and method Dec. 14, 2010
7851857 Dual current path LDMOSFET with graded PBL for ultra high voltage smart power applications Dec. 14, 2010
7820517 Control of hot carrier injection in a metal-oxide semiconductor device Oct. 26, 2010
7812393 High-voltage extended drain MOSFET Oct. 12, 2010
7804150 Lateral trench gate FET with direct source-drain current path Sep. 28, 2010
7800173 Manufacturing process of a vertical-conduction MISFET device with gate dielectric structure having differentiated thickness and vertical-conduction MISFET device thus manufacture Sep. 21, 2010
7791137 High voltage metal oxide semiconductor device Sep. 7, 2010
7781828 Integrated semiconductor chip with lateral thermal insulation Aug. 24, 2010
7781292 High power device isolation and integration Aug. 24, 2010
7732282 Transistor of the I-MOS type comprising two independent gates and method of using such a transistor Jun. 8, 2010
7719054 High-voltage lateral DMOS device May. 18, 2010
7683426 High-voltage lateral DMOS device with diode clamp Mar. 23, 2010
7683453 Edge termination region for high-voltage bipolar-CMOS-DMOS integrated circuit devices Mar. 23, 2010
7605428 High-voltage depletion mode MOSFET Oct. 20, 2009
7605040 Method of forming high breakdown voltage low on-resistance lateral DMOS transistor Oct. 20, 2009
7601597 Manufacturing method of a super-junction semiconductor device Oct. 13, 2009
7576391 High-voltage lateral trench MOSFET Aug. 18, 2009
7576387 MOS transistor and method of manufacturing a MOS transistor Aug. 18, 2009
7498619 Power electronic device of multi-drain type integrated on a semiconductor substrate and relative manufacturing process Mar. 3, 2009
7489007 High-voltage lateral DMOS device Feb. 10, 2009
7378708 Transistor having a protruded drain May. 27, 2008
7345341 High voltage semiconductor devices and methods for fabricating the same Mar. 18, 2008
7301201 High voltage device having polysilicon region in trench and fabricating method thereof Nov. 27, 2007
7230299 Power switch structure with low RDSon and low current limit and method Jun. 12, 2007
7125777 Asymmetric hetero-doped high-voltage MOSFET (AH.sup.2MOS) Oct. 24, 2006
7122861 Semiconductor device and manufacturing method thereof Oct. 17, 2006
7064385 DMOS-transistor with lateral dopant gradient in drift region and method of producing the same Jun. 20, 2006
7056793 Semiconductor device and a method for manufacturing same Jun. 6, 2006
7056798 Semiconductor device, method for manufacturing the same, and liquid jet apparatus Jun. 6, 2006
7038274 Switching regulator with high-side p-type device May. 2, 2006
7034377 Semiconductor device and method of manufacturing the device Apr. 25, 2006
7026248 Method for manufacturing semiconductor device with semiconductor region inserted into trench Apr. 11, 2006
7012301 Trench lateral power MOSFET and a method of manufacturing the same Mar. 14, 2006
7009261 Semiconductor device and method of manufacturing the same Mar. 7, 2006

1 2 3 4 5

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