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Class Information
Number: 257/E21.416
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Multi-step process for the manufacture of unipolar device (epo) > Field-effect transistor (epo) > With an insulated gate (epo) > Thin film unipolar transistor (epo) > Monocrystalline silicon transistor on insulating substrate, e.g., quartz substrate (epo) > On sapphire substrate, e.g., silicon on sapphire (sos) transistor (epo)
Description: This subclass is indented under subclass E21.415. This subclass is substantially the same in scope as ECLA classification H01L21/336D3B.

Patents under this class:

Patent Number Title Of Patent Date Issued
8420458 Semiconductor device and method of producing same Apr. 16, 2013
8409945 Method of fabricating a charge trapping non-volatile memory cell Apr. 2, 2013
7989324 Method for manufacturing silicon on sapphire wafer Aug. 2, 2011
7952173 Nanometric device with a hosting structure of nanometric elements May. 31, 2011
7745349 Method for fabricating semiconductor transistor Jun. 29, 2010
7608494 Thin film transistor array panel and a method for manufacturing the same Oct. 27, 2009
7579246 Semiconductor device manufacturing method including oblique ion implantation process and reticle pattern forming method Aug. 25, 2009
7564100 Silicon on sapphire wafer Jul. 21, 2009
7514745 Semiconductor device Apr. 7, 2009
7491557 Thin film etching method and method of fabricating liquid crystal display device using the same Feb. 17, 2009
7449734 Junction semiconductor device and method for manufacturing the same Nov. 11, 2008
7449766 Methods of forming a contact opening in a semiconductor assembly using a disposable hard mask Nov. 11, 2008
7439108 Coplanar silicon-on-insulator (SOI) regions of different crystal orientations and methods of making the same Oct. 21, 2008
7413966 Method of fabricating polysilicon thin film transistor with catalyst Aug. 19, 2008
7410854 Method of making FUSI gate and resulting structure Aug. 12, 2008
7382021 Insulated gate field-effect transistor having III-VI source/drain layer(s) Jun. 3, 2008
7259047 Method for manufacturing organic thin-film transistor with plastic substrate Aug. 21, 2007
6521525 Electro-optic device, drive substrate for electro-optic device and method of manufacturing the same Feb. 18, 2003
6399429 Method of forming monocrystalline silicon layer, method for manufacturing semiconductor device, and semiconductor device Jun. 4, 2002
6372592 Self-aligned MOSFET with electrically active mask Apr. 16, 2002
6372558 Electrooptic device, driving substrate for electrooptic device, and method of manufacturing the device and substrate Apr. 16, 2002
6365936 Ultra-high resolution liquid crystal display on silicon-on-sapphire Apr. 2, 2002
6346718 Electro-optic device, drive substrate for electro-optic device and method of manufacturing the same Feb. 12, 2002
5834793 Semiconductor devices Nov. 10, 1998
5410172 Thin film transistor and preparation thereof Apr. 25, 1995
5391903 Selective recrystallization to reduce P-channel transistor leakage in silicon-on-sapphire CMOS radiation hardened integrated circuits Feb. 21, 1995
5298434 Selective recrystallization to reduce P-channel transistor leakage in silicon-on-sapphire CMOS radiation hardened integrated circuits Mar. 29, 1994
4433469 Method of forming a self aligned aluminum polycrystalline silicon line Feb. 28, 1984
4394182 Microelectronic shadow masking process for reducing punchthrough Jul. 19, 1983
4380773 Self aligned aluminum polycrystalline silicon contact Apr. 19, 1983
4348804 Method of fabricating an integrated circuit device utilizing electron beam irradiation and selective oxidation Sep. 14, 1982
4271422 CMOS SOS With narrow ring shaped P silicon gate common to both devices Jun. 2, 1981
4263709 Planar semiconductor devices and method of making the same Apr. 28, 1981
4263057 Method of manufacturing short channel MOS devices Apr. 21, 1981
4252574 Low leakage N-channel SOS transistors and method of making them Feb. 24, 1981
4225875 Short channel MOS devices and the method of manufacturing same Sep. 30, 1980
4201603 Method of fabricating improved short channel MOS devices utilizing selective etching and counterdoping of polycrystalline silicon May. 6, 1980

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