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Class Information
Number: 257/E21.409
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Multi-step process for the manufacture of unipolar device (epo) > Field-effect transistor (epo) > With an insulated gate (epo)
Description: This subclass is indented under subclass E21.4. This subclass is substantially the same in scope as ECLA classification H01L21/336.

Sub-classes under this class:

Class Number Class Name Patents
257/E21.441 Active layer is group iii-v compound (epo) 72
257/E21.436 Gate comprising layer with ferroelectric properties (epo) 41
257/E21.424 Lateral single gate silicon transistor (epo) 70
257/E21.435 Lateral single gate single channel silicon transistor with both lightly doped source and drain extensions and source and drain self-aligned to sides of gate, e.g., ldd mosfet, ddd mosfet (epo) 233
257/E21.411 Thin film unipolar transistor (epo) 408
257/E21.444 Using dummy gate wherein at least part of final gate is self-aligned to dummy gate (epo) 753
257/E21.443 Using self-aligned punch through stopper or threshold implant under gate region (epo) 250
257/E21.44 Using self-aligned selective metal deposition simultaneously on gate and on source or drain (epo) 53
257/E21.438 Using self-aligned silicidation, i.e., salicide (epo) 1,149
257/E21.41 Vertical transistor (epo) 513
257/E21.417 With channel containing layer, e.g., p-base, fo rmed in or on drain region, e.g., dmos transistor (epo) 235
257/E21.423 With charge trapping gate insulator, e.g., mnos transistor (epo) 376
257/E21.422 With floating gate (epo) 1,188
257/E21.442 With gate at side of channel (epo) 308
257/E21.437 With lightly doped drain selectively formed at side of gate (epo) 223
257/E21.421 With multiple gate, one gate having mos structure and others having same or a different structure, i.e., non mos, e.g., jfet gate (epo) 227

Patents under this class:
1 2 3 4 5 6 7 8 9 10 11 12 13 14

Patent Number Title Of Patent Date Issued
8710557 MOS transistor having combined-source structure with low power consumption and method for fabricating the same Apr. 29, 2014
8710596 Semiconductor device Apr. 29, 2014
8710538 Light-emitting device with a spacer at bottom surface Apr. 29, 2014
8703569 MOS transistor, manufacturing method thereof, and semiconductor device Apr. 22, 2014
8692315 Semiconductor device and fabrication method thereof Apr. 8, 2014
8692289 Fast turn on silicon controlled rectifiers for ESD protection Apr. 8, 2014
8692327 Lateral double diffused metal oxide semiconductor device and method for manufacturing the same Apr. 8, 2014
8686485 Semiconductor devices and methods of manufacturing the same Apr. 1, 2014
8686402 Tunnel field effect transistor and method of manufacturing same Apr. 1, 2014
8685808 Semiconductor device fabrication method Apr. 1, 2014
8685788 Nanowire tunneling field effect transistor with vertical structure and a manufacturing method thereof Apr. 1, 2014
8685825 Replacement source/drain finFET fabrication Apr. 1, 2014
8679902 Stacked nanowire field effect transistor Mar. 25, 2014
8680619 Method of fabricating hybrid impact-ionization semiconductor device Mar. 25, 2014
8674475 Antifuse and methods of operating and manufacturing the same Mar. 18, 2014
8674458 Transistors with embedded strain-inducing material formed in cavities provided by an oxidizing etch process Mar. 18, 2014
8674457 Methods to reduce gate contact resistance for AC reff reduction Mar. 18, 2014
8674449 Semiconductor device and method for manufacturing the same Mar. 18, 2014
8674444 Structure and method of forming a transistor with asymmetric channel and source/drain regions Mar. 18, 2014
8674442 Semiconductor device and manufacturing method thereof Mar. 18, 2014
8674429 Gate structure in non-volatile memory device Mar. 18, 2014
8669562 Semiconductor device and method for manufacturing the same Mar. 11, 2014
8669163 Tunnel field-effect transistors with superlattice channels Mar. 11, 2014
8669162 Semiconductor device and method of manufacturing the same Mar. 11, 2014
8669146 Semiconductor structures with thinned junctions and methods of manufacture Mar. 11, 2014
8664050 Structure and method to improve ETSOI MOSFETS with back gate Mar. 4, 2014
8664054 Method for forming semiconductor structure Mar. 4, 2014
8664101 Multiple mold structure methods of manufacturing vertical memory devices Mar. 4, 2014
8664103 Metal gate stack formation for replacement gate technology Mar. 4, 2014
8659090 Resistive memory and methods for forming the same Feb. 25, 2014
8659089 Nitrogen passivation of source and drain recesses Feb. 25, 2014
8658536 Selective fin cut process Feb. 25, 2014
8658520 Method of manufacturing semiconductor device Feb. 25, 2014
8658485 Semiconductor device and method of fabricating the same Feb. 25, 2014
8653517 Thin-film transistor and method for manufacturing the same Feb. 18, 2014
8653560 Semiconductor device and fabrication method thereof Feb. 18, 2014
8647986 Semiconductor process Feb. 11, 2014
8647939 Non-relaxed embedded stressors with solid source extension regions in CMOS devices Feb. 11, 2014
8647935 Buried oxidation for enhanced mobility Feb. 11, 2014
8643105 Semiconductor memory device and manufacturing method thereof Feb. 4, 2014
8643111 Electrostatic discharge (ESD) protection device Feb. 4, 2014
8642997 Transistor device with reduced gate resistance Feb. 4, 2014
8642471 Semiconductor structure and method for manufacturing the same Feb. 4, 2014
8642371 Method and system for fabricating ion-selective field-effect transistor (ISFET) Feb. 4, 2014
8642436 Method of manufacturing silicon carbide semiconductor device Feb. 4, 2014
8637359 Fin-last replacement metal gate FinFET process Jan. 28, 2014
8637361 Semiconductor nanostructures, semiconductor devices, and methods of making same Jan. 28, 2014
8637371 Non-planar MOSFET structures with asymmetric recessed source drains and methods for making the same Jan. 28, 2014
8637373 Transistors and methods of manufacturing the same Jan. 28, 2014
8637375 Method of manufacturing a tunnel transistor and IC comprising the same Jan. 28, 2014

1 2 3 4 5 6 7 8 9 10 11 12 13 14

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