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Class Information
Number: 257/E21.407
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Multi-step process for the manufacture of unipolar device (epo) > Field-effect transistor (epo) > Active layer is group iii-v compound, e.g., iii-v velocity modulation transistor (vmt), nerfet (epo) > With an heterojunction interface channel or gate, e.g., hfet, higfet, si sfet, hjfet, hemt (epo)
Description: This subclass is indented under subclass E21.405. This subclass is substantially the same in scope as ECLA classification H01L21/335P3.










Patents under this class:
1 2 3 4 5 6 7 8 9

Patent Number Title Of Patent Date Issued
8691650 MOSFET with recessed channel film and abrupt junctions Apr. 8, 2014
8680578 Field effect transistor with enhanced insulator structure Mar. 25, 2014
8674407 Semiconductor device using a group III nitride-based semiconductor Mar. 18, 2014
8664696 Nitride semiconductor device Mar. 4, 2014
8658482 Compound semiconductor device and method for fabricating the same Feb. 25, 2014
8653561 III-nitride semiconductor electronic device, and method of fabricating III-nitride semiconductor electronic device Feb. 18, 2014
8653559 AlGaN/GaN hybrid MOS-HFET Feb. 18, 2014
8653558 Semiconductor device and method of making Feb. 18, 2014
8648390 Transistor with enhanced channel charge inducing material layer and threshold voltage control Feb. 11, 2014
8643062 III-N device structures and methods Feb. 4, 2014
8637902 Semiconductor device and method of manufacturing the same Jan. 28, 2014
8633094 GaN high voltage HFET with passivation plus gate dielectric multilayer structure Jan. 21, 2014
8629012 Method for forming antimony-based FETs monolithically Jan. 14, 2014
8614460 Semiconductor device and fabrication method of the semiconductor device Dec. 24, 2013
8598627 P-type field-effect transistor and method of production Dec. 3, 2013
8592867 Wide bandgap HEMTS with source connected field plates Nov. 26, 2013
8587031 Dual-gate normally-off nitride transistors Nov. 19, 2013
8581300 Compound semiconductor device and method of manufacturing the same Nov. 12, 2013
8558281 Gate metallization methods for self-aligned sidewall gate GaN HEMT Oct. 15, 2013
8558285 Method using low temperature wafer bonding to fabricate transistors with heterojunctions of Si(Ge) to III-N materials Oct. 15, 2013
8551821 Enhancement normally off nitride semiconductor device manufacturing the same Oct. 8, 2013
8546848 Nitride semiconductor device Oct. 1, 2013
8546852 Semiconductor device Oct. 1, 2013
8524550 Method of manufacturing semiconductor device and semiconductor device Sep. 3, 2013
8524552 Normally-off power JFET and manufacturing method thereof Sep. 3, 2013
8507949 Semiconductor device Aug. 13, 2013
8501557 Method of manufacturing nitride semiconductor device Aug. 6, 2013
8445341 Semiconductor device and fabrication method for the same May. 21, 2013
8395187 Compound semiconductor epitaxial substrate and manufacturing method thereof Mar. 12, 2013
8383471 Self aligned sidewall gate GaN HEMT Feb. 26, 2013
8372697 Digital oxide deposition of SiO.sub.2 layers on wafers Feb. 12, 2013
8368168 III-V-group compound semiconductor device Feb. 5, 2013
8350296 Enhancement mode III-nitride device with floating gate and process for its manufacture Jan. 8, 2013
8318562 Method to increase breakdown voltage of semiconductor devices Nov. 27, 2012
8294181 Compound semiconductor device and method of manufacturing the same Oct. 23, 2012
8264058 MOS-driver compatible JFET structure with enhanced gate source characteristics Sep. 11, 2012
8263449 Method of manufacturing high electron mobility transistor Sep. 11, 2012
8253175 Sealed semiconductor device Aug. 28, 2012
8222675 Nitride semiconductor device including gate insulating portion containing AIN Jul. 17, 2012
8183558 Compound semiconductor device with T-shaped gate electrode May. 22, 2012
8174051 III-nitride power device May. 8, 2012
8174048 III-nitride current control device and method of manufacture May. 8, 2012
8174050 Structure of a pHEMT transistor capable of nanosecond switching May. 8, 2012
8168486 Methods for manufacturing enhancement-mode HEMTs with self-aligned field plate May. 1, 2012
8164104 Light emitting element array and image forming apparatus Apr. 24, 2012
8164116 Semiconductor device with hetero semiconductor region and method of manufacturing the same Apr. 24, 2012
8143650 Semiconductor device having resistance layer formed on side surface of semiconductor layer Mar. 27, 2012
8133776 Semiconductor device and fabrication method for the same Mar. 13, 2012
8134182 Field-effect transistor, semiconductor device including the field-effect transistor, and method of producing semiconductor device Mar. 13, 2012
8125004 Field-effect semiconductor device Feb. 28, 2012

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