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Class Information
Number: 257/E21.406
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Multi-step process for the manufacture of unipolar device (epo) > Field-effect transistor (epo) > Active layer is group iii-v compound, e.g., iii-v velocity modulation transistor (vmt), nerfet (epo) > Using static field induced region, e.g., sit, pbt (epo)
Description: This subclass is indented under subclass E21.405. This subclass is substantially the same in scope as ECLA classification H01L21/335P2.










Patents under this class:

Patent Number Title Of Patent Date Issued
7535039 Vertically integrated dual gate transistor structure and method of making same May. 19, 2009
6097046 Vertical field effect transistor and diode Aug. 1, 2000
5910665 Low capacitance power VFET method and device Jun. 8, 1999
5747842 Epitaxial overgrowth method and devices May. 5, 1998
5700703 Method of fabricating buried control elements in semiconductor devices Dec. 23, 1997
5682046 Heterojunction bipolar semiconductor device and its manufacturing method Oct. 28, 1997
5610085 Method of making a vertical FET using epitaxial overgrowth Mar. 11, 1997
5554561 Epitaxial overgrowth method Sep. 10, 1996
5541424 Permeable base transistor having laminated layers Jul. 30, 1996
5532511 Semiconductor device comprising a highspeed static induction transistor Jul. 2, 1996
5468661 Method of making power VFET device Nov. 21, 1995
5362972 Semiconductor device using whiskers Nov. 8, 1994
5342795 Method of fabricating power VFET gate-refill Aug. 30, 1994
5296403 Method of manufacturing a static induction field-effect transistor Mar. 22, 1994
5274266 Permeable base transistor having selectively grown emitter Dec. 28, 1993
5231037 Method of making a power VFET device using a p+ carbon doped gate layer Jul. 27, 1993
5155561 Permeable base transistor having an electrode configuration for heat dissipation Oct. 13, 1992
5106778 Vertical transistor device fabricated with semiconductor regrowth Apr. 21, 1992
5057883 Permeable base transistor with gate fingers Oct. 15, 1991
4903089 Vertical transistor device fabricated with semiconductor regrowth Feb. 20, 1990
4758534 Process for producing porous refractory metal layers embedded in semiconductor devices Jul. 19, 1988
4735918 Vertical channel field effect transistor Apr. 5, 1988
4677451 Vertical channel field effect transistor Jun. 30, 1987
4468683 High power field effect transistor Aug. 28, 1984











 
 
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