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Class Information
Number: 257/E21.405
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Multi-step process for the manufacture of unipolar device (epo) > Field-effect transistor (epo) > Active layer is group iii-v compound, e.g., iii-v velocity modulation transistor (vmt), nerfet (epo)
Description: This subclass is indented under subclass E21.4. This subclass is substantially the same in scope as ECLA classification H01L21/335P.










Sub-classes under this class:

Class Number Class Name Patents
257/E21.406 Using static field induced region, e.g., sit, pbt (epo) 24
257/E21.407 With an heterojunction interface channel or gate, e.g., hfet, higfet, si sfet, hjfet, hemt (epo) 426
257/E21.408 With one or zero or quasi-one or quasi-zero dimensional channel, e.g., in plane gate transistor (ipg), single electron transistor (set), striped channel transistor, coulomb blockade device (epo) 54


Patents under this class:

Patent Number Title Of Patent Date Issued
8541270 Finlike structures and methods of making same Sep. 24, 2013
8524581 GaN epitaxy with migration enhancement and surface energy modification Sep. 3, 2013
8440519 Semiconductor structures using replacement gate and methods of manufacture May. 14, 2013
8313968 Fabrication of GaN and III-nitride alloys freestanding epilayers membranes using a nonbonding laser Nov. 20, 2012
8043872 Epitaxial material used for GaN based LED with low polarization effect and manufacturing method thereof Oct. 25, 2011
7759257 Precision synthesis of quantum dot nanostructures for fluorescent and optoelectronic devices Jul. 20, 2010
6524937 Selective T-gate process Feb. 25, 2003
6429103 MOCVD-grown emode HIGFET buffer Aug. 6, 2002
6399430 Field effect transistor and method of manufacturing the same Jun. 4, 2002
6163041 Field effect transistor and method of manufacturing the same Dec. 19, 2000
6150245 Method of manufacturing a field effect transistor Nov. 21, 2000
6071780 Compound semiconductor apparatus and method for manufacturing the apparatus Jun. 6, 2000
6069375 Field effect transistor May. 30, 2000
6013926 Semiconductor device with refractory metal element Jan. 11, 2000
5994714 Quantum diffraction transistor Nov. 30, 1999
5942772 Semiconductor device and method of manufacturing the same Aug. 24, 1999
5940696 Method of manufacturing a quantum diffraction transistor Aug. 17, 1999
4839702 Semiconductor device based on charge emission from a quantum well Jun. 13, 1989











 
 
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