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Class Information
Number: 257/E21.404
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Multi-step process for the manufacture of unipolar device (epo) > Field-effect transistor (epo) > With one or zero or quasi-one or quasi-zero dimensional charge carrier gas channel, e.g., quantum wire fet; single electron trans istor (set); striped channel transistor; coulomb blockade device (epo)
Description: This subclass is indented under subclass E21.4. This subclass is substantially the same in scope as ECLA classification H01L21/335D.


Patents under this class:
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Patent Number Title Of Patent Date Issued
7588954 InGaAs/GaAs lasers on silicon produced by LEPECVD and MOCVD Sep. 15, 2009
7560753 Field effect transistor with thin gate electrode and method of fabricating same Jul. 14, 2009
7465953 Positioning of nanoparticles and fabrication of single election devices Dec. 16, 2008
7423285 Wire cross-point fet structure Sep. 9, 2008
7374980 Field effect transistor with thin gate electrode and method of fabricating same May. 20, 2008
7358139 Method of forming a field effect transistor including depositing and removing insulative material effective to expose transistor gate conductive material but not transistor gate semiconductor Apr. 15, 2008
7176066 Fabrication of nanoelectronic circuits Feb. 13, 2007
7166858 Variable capacitor single-electron device Jan. 23, 2007
7067341 Single electron transistor manufacturing method by electro-migration of metallic nanoclusters Jun. 27, 2006
7041539 Method for making an island of material confined between electrodes, and application to transistors May. 9, 2006
7019324 Strongly textured atomic ridge and dot MOSFETs, sensors and filters Mar. 28, 2006
6998310 Processes for making a single election transistor with a vertical channel Feb. 14, 2006
6998333 Method for making nanoscale wires and gaps for switches and transistors Feb. 14, 2006
6995054 Method of manufacturing a semiconductor device Feb. 7, 2006
6984845 Single-electron transistor using nanoparticles Jan. 10, 2006
6967140 Quantum wire gate device and method of making same Nov. 22, 2005
6936484 Method of manufacturing semiconductor device and semiconductor device Aug. 30, 2005
6933222 Microcircuit fabrication and interconnection Aug. 23, 2005
6909141 Method for producing a vertical semiconductor transistor component and vertical semiconductor transistor component Jun. 21, 2005
6897098 Method of fabricating an ultra-narrow channel semiconductor device May. 24, 2005
6894352 Single-electron transistor and fabrication method thereof May. 17, 2005
6888665 Electronic devices and methods using moleculary-bridged metal nanoparticles May. 3, 2005
6855603 Vertical nano-size transistor using carbon nanotubes and manufacturing method thereof Feb. 15, 2005
6833567 Vertical nano-size transistor using carbon nanotubes and manufacturing method thereof Dec. 21, 2004
6815294 Vertical nano-size transistor using carbon nanotubes and manufacturing method thereof Nov. 9, 2004
6800511 Method for fabricating semiconductor device with negative differential conductance or transconductance Oct. 5, 2004
6740910 Field-effect transistor, circuit configuration and method of fabricating a field-effect transistor May. 25, 2004
6724019 Multi-layered, single crystal field effect transistor Apr. 20, 2004
6673717 Methods for fabricating nanopores for single-electron devices Jan. 6, 2004
6653687 Insulated gate semiconductor device Nov. 25, 2003
6597026 Semiconductor device comprising plural isolated channels in a shallow trench isolation region Jul. 22, 2003
6570220 Fabrication of deep submicron structures and quantum wire transistors using hard-mask transistor width definition May. 27, 2003
6566704 Vertical nano-size transistor using carbon nanotubes and manufacturing method thereof May. 20, 2003
6515319 Field-effect-controlled transistor and method for fabricating the transistor Feb. 4, 2003
6509619 Strongly textured atomic ridge and dot Mosfets, sensors and filters Jan. 21, 2003
6465782 Strongly textured atomic ridges and tip arrays Oct. 15, 2002
6410934 Silicon nanoparticle electronic switches Jun. 25, 2002
6355532 Subtractive oxidation method of fabricating a short-length and vertically-oriented channel, dual-gate, CMOS FET Mar. 12, 2002
6346436 Quantum thin line producing method and semiconductor device Feb. 12, 2002
6326311 Microstructure producing method capable of controlling growth position of minute particle or thin and semiconductor device employing the microstructure Dec. 4, 2001
6300221 Method of fabricating nanoscale structures Oct. 9, 2001
6297095 Memory device that includes passivated nanoclusters and method for manufacture Oct. 2, 2001
6274007 Methods of formation of a silicon nanostructure, a silicon quantum wire array and devices based thereon Aug. 14, 2001
6268273 Fabrication method of single electron tunneling device Jul. 31, 2001
6221720 Method of making an electronic device and the same Apr. 24, 2001
6207511 Self-aligned trenched-channel lateral-current-flow transistor Mar. 27, 2001
6204517 Single electron transistor memory array Mar. 20, 2001
6180441 Bar field effect transistor Jan. 30, 2001
6177299 Transistor having substantially isolated body and method of making the same Jan. 23, 2001
6127702 Semiconductor device having an SOI structure and manufacturing method therefor Oct. 3, 2000

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