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Class Information
Number: 257/E21.402
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Multi-step process for the manufacture of unipolar device (epo) > Field-effect transistor (epo) > Using static field induced region, e.g., sit, pbt (epo) > Permeable base transistor (pbt) (epo)
Description: This subclass is indented under subclass E21.401. This subclass is substantially the same in scope as ECLA classification H01L21/335B2.










Patents under this class:

Patent Number Title Of Patent Date Issued
RE42955 GaN-based permeable base transistor and method of fabrication Nov. 22, 2011
7413958 GaN-based permeable base transistor and method of fabrication Aug. 19, 2008
7405131 Method and structure to prevent silicide strapping of source/drain to body in semiconductor devices with source/drain stressor Jul. 29, 2008
6274892 Devices formable by low temperature direct bonding Aug. 14, 2001
6194290 Methods for making semiconductor devices by low temperature direct bonding Feb. 27, 2001
6153495 Advanced methods for making semiconductor devices by low temperature direct bonding Nov. 28, 2000
5958505 Layered structure with a silicide layer and process for producing such a layered structure Sep. 28, 1999
5354697 Implantation method having improved material purity Oct. 11, 1994
5298787 Semiconductor embedded layer technology including permeable base transistor Mar. 29, 1994
5290715 Method of making dielectrically isolated metal base transistors and permeable base transistors Mar. 1, 1994
5274266 Permeable base transistor having selectively grown emitter Dec. 28, 1993
5236872 Method of manufacturing a semiconductor device having a semiconductor body with a buried silicide layer Aug. 17, 1993
5089431 Method of manufacturing a semiconductor device including a static induction transistor Feb. 18, 1992
5032538 Semiconductor embedded layer technology utilizing selective epitaxial growth methods Jul. 16, 1991
4901121 Semiconductor device comprising a perforated metal silicide layer Feb. 13, 1990
4785340 Semiconductor device having doping multilayer structure Nov. 15, 1988
4510016 Method of fabricating submicron silicon structures such as permeable base transistors Apr. 9, 1985
4378629 Semiconductor embedded layer technology including permeable base transistor, fabrication method Apr. 5, 1983
4106044 Field effect transistor having unsaturated characteristics Aug. 8, 1978











 
 
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