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Class Information
Number: 257/E21.401
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Multi-step process for the manufacture of unipolar device (epo) > Field-effect transistor (epo) > Using static field induced region, e.g., sit, pbt (epo)
Description: This subclass is indented under subclass E21.4. This subclass is substantially the same in scope as ECLA classification H01L21/335B.










Sub-classes under this class:

Class Number Class Name Patents
257/E21.402 Permeable base transistor (pbt) (epo) 19


Patents under this class:
1 2

Patent Number Title Of Patent Date Issued
8134182 Field-effect transistor, semiconductor device including the field-effect transistor, and method of producing semiconductor device Mar. 13, 2012
7906417 Compound semiconductor device with T-shaped gate electrode and its manufacture Mar. 15, 2011
7859031 Light modulating sensing MOSFET transistor and process for manufacturing the same Dec. 28, 2010
7598546 Separative extended gate field effect transistor based vitamin C sensor and forming method thereof Oct. 6, 2009
7573079 Field effect type semiconductor device Aug. 11, 2009
7535039 Vertically integrated dual gate transistor structure and method of making same May. 19, 2009
6180965 Semiconductor device having a static induction in a recessed portion Jan. 30, 2001
6008519 Vertical transistor and method Dec. 28, 1999
5739044 Method of manufacturing semiconductor device Apr. 14, 1998
5686330 Method of making a self-aligned static induction transistor Nov. 11, 1997
5663582 High frequency static induction transistor having high output Sep. 2, 1997
5599724 FET having part of active region formed in semiconductor layer in through hole formed in gate electrode and method for manufacturing the same Feb. 4, 1997
5591991 Semiconductor device and method of manufacturing the same Jan. 7, 1997
RE35405 Method of manufacturing semiconductor device utilizing an accumulation layer Dec. 17, 1996
5405789 Method of manufacturing a semiconductor device whereby a laterally bounded semiconductor zone is formed in a semiconductor body in a self-aligning manner Apr. 11, 1995
5369294 Field effect transistor and method of fabricating Nov. 29, 1994
5364802 Method of making a semiconductor device with buried electrode Nov. 15, 1994
5308790 Selective sidewall diffusion process using doped SOG May. 3, 1994
5306934 Semiconductor device with buried electrode Apr. 26, 1994
5290716 Method of manufacturing semiconductor devices Mar. 1, 1994
5264381 Method of manufacturing a static induction type switching device Nov. 23, 1993
5260227 Method of making a self aligned static induction transistor Nov. 9, 1993
5258642 Semiconductor device having reduced parasitic capacitance Nov. 2, 1993
5192696 Field effect transistor and method of fabricating Mar. 9, 1993
5184201 Static induction transistor Feb. 2, 1993
5177029 Method for manufacturing static induction type semiconductor device enhancement mode power Jan. 5, 1993
5169795 Method of manufacturing step cut type insulated gate SIT having low-resistance electrode Dec. 8, 1992
5143859 Method of manufacturing a static induction type switching device Sep. 1, 1992
5132238 Method of manufacturing semiconductor device utilizing an accumulation layer Jul. 21, 1992
5115287 Step-cut insulated gate static induction transistors and method of manufacturing the same May. 19, 1992
5106770 Method of manufacturing semiconductor devices Apr. 21, 1992
5089431 Method of manufacturing a semiconductor device including a static induction transistor Feb. 18, 1992
5066603 Method of manufacturing static induction transistors Nov. 19, 1991
5060029 Step cut type insulated gate SIT having low-resistance electrode and method of manufacturing the same Oct. 22, 1991
4984037 Semiconductor device with conductive rectifying rods Jan. 8, 1991
4971929 Method of making RF transistor employing dual metallization with self-aligned first metal Nov. 20, 1990
4945392 Static induction transistor and manufacturing method of the same Jul. 31, 1990
4889826 Static induction transistor and manufacturing method of the same Dec. 26, 1989
4845051 Buried gate JFET Jul. 4, 1989
4713358 Method of fabricating recessed gate static induction transistors Dec. 15, 1987
4692780 Junction field effect transistor and method of fabricating Sep. 8, 1987
4679307 Method of manufacturing a recessed gate of a semiconductor device Jul. 14, 1987
4651407 Method of fabricating a junction field effect transistor utilizing epitaxial overgrowth and vertical junction formation Mar. 24, 1987
4611384 Method of making junction field effect transistor of static induction type Sep. 16, 1986
4596605 Fabrication process of static induction transistor and solid-state image sensor device Jun. 24, 1986
4589190 Fabrication of drilled and diffused junction field-effect transistors May. 20, 1986
4587712 Method for making vertical channel field controlled device employing a recessed gate structure May. 13, 1986
4571815 Method of making vertical channel field controlled device employing a recessed gate structure Feb. 25, 1986
4566172 Method of fabricating a static induction type recessed junction field effect transistor Jan. 28, 1986
4528745 Method for the formation of buried gates of a semiconductor device utilizing etch and refill techniques Jul. 16, 1985

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