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Class Information
Number: 257/E21.398
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Multi-step process for the manufacture of unipolar device (epo) > Active layer is group iii-v compound (epo)
Description: This subclass is indented under subclass E21.394. This subclass is substantially the same in scope as ECLA classification H01L21/334P.










Sub-classes under this class:

Class Number Class Name Patents
257/E21.399 Transistor-like structure, e.g., hot electron transistor (het), metal base transistor (mbt), resonant tunneling hot electron transistor (rhet), resonant tunneling transistor (rtt), bulk barrier transistor (bbt), planar doped barrier transistor (pdbt), charge injection transistor (chint) (epo) 18


Patents under this class:

Patent Number Title Of Patent Date Issued
8642368 Enhancement of LED light extraction with in-situ surface roughening Feb. 4, 2014
8524581 GaN epitaxy with migration enhancement and surface energy modification Sep. 3, 2013
8344418 Materials for interfacing high-K dielectric layers with III-V semiconductors Jan. 1, 2013
8283240 Method for fabricating semiconductor device Oct. 9, 2012
8252662 Method and structure for manufacture of light emitting diode devices using bulk GaN Aug. 28, 2012
8148241 Indium surfactant assisted HVPE of high quality gallium nitride and gallium nitride alloy films Apr. 3, 2012
7989238 Group III nitride-based compound semiconductor light-emitting device and production method therefor Aug. 2, 2011
7989280 Dielectric interface for group III-V semiconductor device Aug. 2, 2011
7842587 III-V MOSFET fabrication and device Nov. 30, 2010
7842595 Fabricating electronic-photonic devices having an active layer with spherical quantum dots Nov. 30, 2010
7790536 Dopant confinement in the delta doped layer using a dopant segregration barrier in quantum well structures Sep. 7, 2010
7759219 Method of manufacturing nitride semiconductor device Jul. 20, 2010
7749784 Fabricating method of single electron transistor (SET) by employing nano-lithographical technology in the semiconductor process Jul. 6, 2010
7659129 Fabricating method for quantum dot of active layer of LED by nano-lithography Feb. 9, 2010











 
 
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