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Class Information
Number: 257/E21.397
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Multi-step process for the manufacture of unipolar device (epo) > Metal-insulator-semiconductor capacitor, e.g., trench capacitor (epo) > Comprising pn junction, e.g., hybrid capacitor (epo)
Description: This subclass is indented under subclass E21.396. This subclass is substantially the same in scope as ECLA classification H01L21/334C2.










Patents under this class:

Patent Number Title Of Patent Date Issued
8298888 Creating integrated circuit capacitance from gate array structures Oct. 30, 2012
7888229 Method for manufacturing an energy storage device Feb. 15, 2011
7829928 Semiconductor structure of a high side driver and method for manufacturing the same Nov. 9, 2010
7435675 Method of providing a pre-patterned high-k dielectric film Oct. 14, 2008
6396123 Semiconductor device provided with on-chip decoupling condenser utilizing CMP dummy patterns May. 28, 2002
6265755 Semiconductor integrated circuit comprising MIS capacitors Jul. 24, 2001
6262469 Capacitor for use in a capacitor divider that has a floating gate transistor as a corresponding capacitor Jul. 17, 2001











 
 
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