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Class Information
Number: 257/E21.396
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Multi-step process for the manufacture of unipolar device (epo) > Metal-insulator-semiconductor capacitor, e.g., trench capacitor (epo)
Description: This subclass is indented under subclass E21.394. This subclass is substantially the same in scope as ECLA classification H01L21/334C.
Sub-classes under this class:
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7615460 |
Hard mask technique in forming a plug |
Nov. 10, 2009 |
| 7615443 |
Method of forming finFET device |
Nov. 10, 2009 |
| 7595229 |
Configurable integrated circuit capacitor array using via mask layers |
Sep. 29, 2009 |
| 7592233 |
Method for forming a memory device with a recessed gate |
Sep. 22, 2009 |
| 7585741 |
Methods of forming capacitors |
Sep. 8, 2009 |
| 7582525 |
Method for fabricating capacitor of semiconductor memory device using amorphous carbon |
Sep. 1, 2009 |
| 7573086 |
TaN integrated circuit (IC) capacitor |
Aug. 11, 2009 |
| 7569451 |
Method of fabricating an isolation shallow trench |
Aug. 4, 2009 |
| 7563730 |
Hafnium lanthanide oxynitride films |
Jul. 21, 2009 |
| 7563686 |
Method for forming a memory device with a recessed gate |
Jul. 21, 2009 |
| 7563671 |
Method for forming trench capacitor and memory cell |
Jul. 21, 2009 |
| 7547937 |
Semiconductor memory device and method for manufacturing the same |
Jun. 16, 2009 |
| 7544563 |
Methods of forming a plurality of capacitors |
Jun. 9, 2009 |
| 7544604 |
Tantalum lanthanide oxynitride films |
Jun. 9, 2009 |
| 7531418 |
Method of producing a conductive layer including two metal nitrides |
May. 12, 2009 |
| 7525142 |
Semiconductor device including a conductive layer buried in an opening and method of manufacturing the same |
Apr. 28, 2009 |
| 7524774 |
Manufacturing method of semiconductor device, semiconductor manufacturing apparatus, plasma nitridation method, computer recording medium, and program |
Apr. 28, 2009 |
| 7501320 |
Semiconductor device with dielectric structure and method for fabricating the same |
Mar. 10, 2009 |
| 7494890 |
Trench capacitor and method for manufacturing the same |
Feb. 24, 2009 |
| 7482239 |
Methods of forming integrated circuitry |
Jan. 27, 2009 |
| 7468317 |
Method of forming metal line of semiconductor device |
Dec. 23, 2008 |
| 7456461 |
Stacked capacitor array and fabrication method for a stacked capacitor array |
Nov. 25, 2008 |
| 7442604 |
Methods and batch type atomic layer deposition apparatus for forming dielectric films and methods of manufacturing metal-insulator-metal capacitors including the dielectric films |
Oct. 28, 2008 |
| 7439112 |
Semiconductor device using partial SOI substrate and manufacturing method thereof |
Oct. 21, 2008 |
| 7439128 |
Method of creating deep trench capacitor using a P+ metal electrode |
Oct. 21, 2008 |
| 7439149 |
Structure and method for forming SOI trench memory with single-sided strap |
Oct. 21, 2008 |
| 7439568 |
Vertical body-contacted SOI transistor |
Oct. 21, 2008 |
| 7425486 |
Method for forming a trench capacitor |
Sep. 16, 2008 |
| 7423311 |
Atomic layer deposition of Zr.sub.3N.sub.4/ZrO.sub.2 films as gate dielectrics |
Sep. 9, 2008 |
| 7410862 |
Trench capacitor and method for fabricating the same |
Aug. 12, 2008 |
| 7410863 |
Methods of forming and using memory cell structures |
Aug. 12, 2008 |
| 7405439 |
Memory cell structure and semiconductor memory device |
Jul. 29, 2008 |
| 7405167 |
Method of manufacturing nonvolatile organic memory device and nonvolatile organic memory device manufactured by the same |
Jul. 29, 2008 |
| 7402487 |
Process for fabricating a semiconductor device having deep trench structures |
Jul. 22, 2008 |
| 7393753 |
Method for forming a storage cell capacitor compatible with high dielectric constant materials |
Jul. 1, 2008 |
| 7387939 |
Methods of forming semiconductor structures and capacitor devices |
Jun. 17, 2008 |
| 7384842 |
Methods involving silicon-on-insulator trench memory with implanted plate |
Jun. 10, 2008 |
| 7368779 |
Hemi-spherical structure and method for fabricating the same |
May. 6, 2008 |
| 7364979 |
Capcitor with single crystal tantalum oxide layer and method for fabricating the same |
Apr. 29, 2008 |
| 7344953 |
Process for vertically patterning substrates in semiconductor process technology by means of inconformal deposition |
Mar. 18, 2008 |
| 7339224 |
Trench capacitor and corresponding method of production |
Mar. 4, 2008 |
| 7335553 |
Method for forming trench capacitor and memory cell |
Feb. 26, 2008 |
| 7332392 |
Trench-capacitor DRAM device and manufacture method thereof |
Feb. 19, 2008 |
| 7332391 |
Method for forming storage node contacts in semiconductor device |
Feb. 19, 2008 |
| 7332390 |
Semiconductor memory device and fabrication thereof |
Feb. 19, 2008 |
| 7332394 |
Method to reduce a capacitor depletion phenomena |
Feb. 19, 2008 |
| 7316951 |
Fabrication method for a trench capacitor having an insulation collar |
Jan. 8, 2008 |
| 7303970 |
Method of fabricating dielectric mixed layers and capacitive element and use thereof |
Dec. 4, 2007 |
| 7294543 |
DRAM (Dynamic Random Access Memory) cells |
Nov. 13, 2007 |
| 7271056 |
Method of fabricating a trench capacitor DRAM device |
Sep. 18, 2007 |
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