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Class Information
Number: 257/E21.394
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Multi-step process for the manufacture of unipolar device (epo)
Description: This subclass is indented under subclass E21.085. This subclass is substantially the same in scope as ECLA classification H01L21/334.










Sub-classes under this class:

Class Number Class Name Patents
257/E21.398 Active layer is group iii-v compound (epo) 14
257/E21.456 Charge transfer device (epo) 29
257/E21.4 Field-effect transistor (epo) 104
257/E21.396 Metal-insulator-semiconductor capacitor, e.g., trench capacitor (epo) 471
257/E21.395 Transistor-like structure, e.g., hot electron transistor (het); metal base transistor (mbt); resonant tunneling het (rhet); resonant tunneling transistor (rtt ); bulk barrier transistor (bbt); planar doped barrier transistor (pdbt); charge injection transistor (chint); ballistic transistor (epo) 33


Patents under this class:

Patent Number Title Of Patent Date Issued
8148217 Semiconductor manufacturing method and semiconductor device Apr. 3, 2012
8125023 Vertical type power semiconductor device having a super junction structure Feb. 28, 2012
8120063 Modulation-doped multi-gate devices Feb. 21, 2012
8043904 Semiconductor manufacturing method and semiconductor device Oct. 25, 2011
8035141 Bi-layer nFET embedded stressor element and integration to enhance drive current Oct. 11, 2011
7662679 Semiconductor manufacturing method and semiconductor device Feb. 16, 2010
7598132 Active photosensitive structure with buried depletion layer Oct. 6, 2009
7494856 Semiconductor fabrication process using etch stop layer to optimize formation of source/drain stressor Feb. 24, 2009
7224026 Nanoelectronic devices and circuits May. 29, 2007
6784519 Semiconductor device Aug. 31, 2004
5834793 Semiconductor devices Nov. 10, 1998











 
 
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