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Class Information
Number: 257/E21.393
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Multi-step process for manufacture of device of bipolar type, e.g., diodes, transistors, thyristors, resistors, capacitors) (epo) > Device comprising three or more electrodes (epo) > Thyristor (epo) > Active layer is group iii-v compound (epo)
Description: This subclass is indented under subclass E21.388. This subclass is substantially the same in scope as ECLA classification H01L21/332Q.

Patents under this class:

Patent Number Title Of Patent Date Issued
8252662 Method and structure for manufacture of light emitting diode devices using bulk GaN Aug. 28, 2012
8193016 Semiconductor laser device and method of manufacturing the same Jun. 5, 2012
8173469 Fabrication method of light emitting device May. 8, 2012
7842595 Fabricating electronic-photonic devices having an active layer with spherical quantum dots Nov. 30, 2010
7763928 Multi-time programmable memory Jul. 27, 2010
7507676 Film formation method and apparatus for semiconductor process Mar. 24, 2009

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