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Class Information
Number: 257/E21.392
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Multi-step process for manufacture of device of bipolar type, e.g., diodes, transistors, thyristors, resistors, capacitors) (epo) > Device comprising three or more electrodes (epo) > Thyristor (epo) > Bi-directional thyristor (epo)
Description: This subclass is indented under subclass E21.388. This subclass is substantially the same in scope as ECLA classification H01L21/332P.










Patents under this class:

Patent Number Title Of Patent Date Issued
8680621 Integrated circuit, electronic device and ESD protection therefor Mar. 25, 2014
8664690 Bi-directional triode thyristor for high voltage electrostatic discharge protection Mar. 4, 2014
8242534 Semiconductor device and manufacturing method thereof Aug. 14, 2012
7718473 HF control bidirectional switch May. 18, 2010
7374974 Thyristor-based device with trench dielectric material May. 20, 2008
6828176 Thyristor having a first emitter with relatively lightly doped portion to the base Dec. 7, 2004
6777271 Thyristor-based device including trench isolation Aug. 17, 2004
4066484 Method of manufacture of a gold diffused thyristor Jan. 3, 1978











 
 
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