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Class Information
Number: 257/E21.391
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Multi-step process for manufacture of device of bipolar type, e.g., diodes, transistors, thyristors, resistors, capacitors) (epo) > Device comprising three or more electrodes (epo) > Thyristor (epo) > Structurally associated with other devices (epo) > Other device being a controlling device of the field-effect-type (epo)
Description: This subclass is indented under subclass E21.39. This subclass is substantially the same in scope as ECLA classification H01L21/332M2.










Patents under this class:

Patent Number Title Of Patent Date Issued
8236624 Method for producing a thyristor Aug. 7, 2012
7910949 Power semiconductor device Mar. 22, 2011
7504286 Semiconductor memory devices and methods for fabricating the same Mar. 17, 2009
6455379 Power trench transistor device source region formation using silicon spacer Sep. 24, 2002
6246090 Power trench transistor device source region formation using silicon spacer Jun. 12, 2001
6110763 One mask, power semiconductor device fabrication process Aug. 29, 2000
6054369 Lifetime control for semiconductor devices Apr. 25, 2000
5977570 Semiconductor device and manufacturing method thereof Nov. 2, 1999
5946572 Method of manufacturing a semiconductor device having recessed gate structures Aug. 31, 1999
5894140 Semiconductor device having recessed gate structures and method of manufacturing the same Apr. 13, 1999
5879968 Process for manufacture of a P-channel MOS gated device with base implant through the contact window Mar. 9, 1999
5541430 VDMOS semiconductor device Jul. 30, 1996
5477064 Thyristor Dec. 19, 1995
5460981 Semiconductor device having increased current capacity Oct. 24, 1995
5389801 Semiconductor device having increased current capacity Feb. 14, 1995
5381025 Insulated gate thyristor with gate turn on and turn off Jan. 10, 1995
5324670 Method of manufacturing a thyristor device with improved turn-off characteristics Jun. 28, 1994
5306929 MOS controlled thyristor Apr. 26, 1994
5286655 Method of manufacturing a semiconductor device of an anode short circuit structure Feb. 15, 1994
5234851 Small cell, low contact assistance rugged power field effect devices and method of fabrication Aug. 10, 1993
5194394 Thyristor and method of manufacturing the same Mar. 16, 1993
5155569 Thyristor device with improved turn-off characteristics Oct. 13, 1992
5119153 Small cell low contact resistance rugged power field effect devices and method of fabrication Jun. 2, 1992
5091766 Thyristor with first and second independent control electrodes Feb. 25, 1992
4985740 Power field effect devices having low gate sheet resistance and low ohmic contact resistance Jan. 15, 1991
4883767 Method of fabricating self aligned semiconductor devices Nov. 28, 1989
4782379 Semiconductor device having rapid removal of majority carriers from an active base region thereof at device turn-off and method of fabricating this device Nov. 1, 1988
4466176 Process for manufacturing insulated-gate semiconductor devices with integral shorts Aug. 21, 1984
4417385 Processes for manufacturing insulated-gate semiconductor devices with integral shorts Nov. 29, 1983











 
 
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