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Class Information
Number: 257/E21.39
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Multi-step process for manufacture of device of bipolar type, e.g., diodes, transistors, thyristors, resistors, capacitors) (epo) > Device comprising three or more electrodes (epo) > Thyristor (epo) > Structurally associated with other devices (epo)
Description: This subclass is indented under subclass E21.388. This subclass is substantially the same in scope as ECLA classification H01L21/332M.










Sub-classes under this class:

Class Number Class Name Patents
257/E21.391 Other device being a controlling device of the field-effect-type (epo) 29


Patents under this class:

Patent Number Title Of Patent Date Issued
8691634 Optically triggered semiconductor device and method for making the same Apr. 8, 2014
8420454 Three-terminal power device with high switching speed and manufacturing process Apr. 16, 2013
7374974 Thyristor-based device with trench dielectric material May. 20, 2008
6437419 Emitter ballast resistor with enhanced body effect to improve the short circuit withstand capability of power devices Aug. 20, 2002
5956577 Method of manufacturing serrated gate-type or joined structure Sep. 21, 1999
5841155 Semiconductor device containing two joined substrates Nov. 24, 1998
5430311 Constant-voltage diode for over-voltage protection Jul. 4, 1995
5346849 Method of making a groove structure for isolation between elements comprising a GTO thyristor Sep. 13, 1994
5281847 Groove structure for isolating elements comprising a GTO structure Jan. 25, 1994
4982259 Sensitive thyristor having improved noise-capability Jan. 1, 1991











 
 
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