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Class Information
Number: 257/E21.389
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Multi-step process for manufacture of device of bipolar type, e.g., diodes, transistors, thyristors, resistors, capacitors) (epo) > Device comprising three or more electrodes (epo) > Thyristor (epo) > Lateral or planar thyristor (epo)
Description: This subclass is indented under subclass E21.388. This subclass is substantially the same in scope as ECLA classification H01L21/332B.










Patents under this class:

Patent Number Title Of Patent Date Issued
8703547 Thyristor comprising a special doped region characterized by an LDD region and a halo implant Apr. 22, 2014
8680621 Integrated circuit, electronic device and ESD protection therefor Mar. 25, 2014
8586423 Silicon controlled rectifier with stress-enhanced adjustable trigger voltage Nov. 19, 2013
8420454 Three-terminal power device with high switching speed and manufacturing process Apr. 16, 2013
8093107 Thyristor semiconductor memory and method of manufacture Jan. 10, 2012
7935619 Polarity dependent switch for resistive sense memory May. 3, 2011
7786505 Reduction of charge leakage from a thyristor-based memory cell Aug. 31, 2010
7638370 Method for producing multi-gate field-effect transistor with fin structure having drain-extended MOS field-effect transistor Dec. 29, 2009
7456054 Gated lateral thyristor-based random access memory cell (GLTRAM) Nov. 25, 2008
7374974 Thyristor-based device with trench dielectric material May. 20, 2008
6888176 Thyrister semiconductor device May. 3, 2005
6888177 Increased base-emitter capacitance May. 3, 2005
6849481 Thyristor-based SRAM and method for the fabrication thereof Feb. 1, 2005
6815732 High-voltage silicon controlled rectifier structure Nov. 9, 2004
6521487 Method for making a thyristor Feb. 18, 2003
6303961 Complementary semiconductor devices Oct. 16, 2001
6144065 MOS gated device with self aligned cells Nov. 7, 2000
5534294 Process for producing Semiconductor silicon wafer Jul. 9, 1996
4942446 Semiconductor device for switching, and the manufacturing method therefor Jul. 17, 1990
4219373 Method of fabricating a semiconductor device Aug. 26, 1980











 
 
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