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Class Information
Number: 257/E21.388
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Multi-step process for manufacture of device of bipolar type, e.g., diodes, transistors, thyristors, resistors, capacitors) (epo) > Device comprising three or more electrodes (epo) > Thyristor (epo)
Description: This subclass is indented under subclass E21.369. This subclass is substantially the same in scope as ECLA classification H01L21/332.










Sub-classes under this class:

Class Number Class Name Patents
257/E21.393 Active layer is group iii-v compound (epo) 6
257/E21.392 Bi-directional thyristor (epo) 8
257/E21.389 Lateral or planar thyristor (epo) 20
257/E21.39 Structurally associated with other devices (epo) 10


Patents under this class:
1 2

Patent Number Title Of Patent Date Issued
8703547 Thyristor comprising a special doped region characterized by an LDD region and a halo implant Apr. 22, 2014
8680621 Integrated circuit, electronic device and ESD protection therefor Mar. 25, 2014
8652919 Tunable semiconductor device Feb. 18, 2014
8524543 Thyristor-based memory cells, devices and systems including the same and methods for forming the same Sep. 3, 2013
8441070 Semiconductor device and method of manufacturing semiconductor device May. 14, 2013
8420454 Three-terminal power device with high switching speed and manufacturing process Apr. 16, 2013
8384126 Low voltage PNPN protection device Feb. 26, 2013
8283213 Method of minimizing field stop insulated gate bipolar transistor (IGBT) buffer and emitter charge variation Oct. 9, 2012
8264037 Semiconductor device and method of manufacturing semiconductor device Sep. 11, 2012
8120104 Semiconductor device and method of manufacturing semiconductor device Feb. 21, 2012
8093107 Thyristor semiconductor memory and method of manufacture Jan. 10, 2012
8049248 Semiconductor device including thyristor and method of manufacturing the same Nov. 1, 2011
8012775 Method of forming a light activated silicon controlled switch Sep. 6, 2011
8013384 Method for manufacturing a high integration density power MOS device Sep. 6, 2011
7910949 Power semiconductor device Mar. 22, 2011
7851274 Processing technique to improve the turn-off gain of a silicon carbide gate turn-off thyristor Dec. 14, 2010
7846814 Semiconductor layer structure and method of making the same Dec. 7, 2010
7816706 Power semiconductor device Oct. 19, 2010
7718473 HF control bidirectional switch May. 18, 2010
7626647 Electrostatic discharge protection structure and electrostatic discharge protection device for a liquid crystal display, and method of making the same Dec. 1, 2009
7563653 ESD protection for high voltage applications Jul. 21, 2009
7470598 Semiconductor layer structure and method of making the same Dec. 30, 2008
7442584 Isolated vertical power device structure with both N-doped and P-doped trenches Oct. 28, 2008
7374974 Thyristor-based device with trench dielectric material May. 20, 2008
7326596 High voltage power device with low diffusion pipe resistance Feb. 5, 2008
7271040 Electrode contact section of semiconductor device Sep. 18, 2007
7242037 Process for making non-uniform minority carrier lifetime distribution in high performance silicon power devices Jul. 10, 2007
7224002 Silicon on insulator read-write non-volatile memory comprising lateral thyristor and trapping layer May. 29, 2007
6924177 Method for producing a thyristor Aug. 2, 2005
6835997 Thyristor-based device with trench dielectric material Dec. 28, 2004
6828176 Thyristor having a first emitter with relatively lightly doped portion to the base Dec. 7, 2004
6818482 Method for trench isolation for thyristor-based device Nov. 16, 2004
6790713 Method for making an inlayed thyristor-based device Sep. 14, 2004
6787816 Thyristor having one or more doped layers Sep. 7, 2004
6780725 METHOD FOR FORMING A SEMICONDUCTOR DEVICE INCLUDING FORMING VERTICAL NPN AND PNP TRANSISTORS BY EXPOSING THE EPITAXIAL LAYER, FORMING A MONOCRYSTAL LAYER AND ADJUSTING THE IMPURITY CONCENTRATI Aug. 24, 2004
6777271 Thyristor-based device including trench isolation Aug. 17, 2004
6762080 Method of manufacturing a semiconductor device having a cathode and an anode from a wafer Jul. 13, 2004
6727528 Thyristor-based device including trench dielectric isolation for thyristor-body regions Apr. 27, 2004
6696323 Method of manufacturing semiconductor device having trench filled up with gate electrode Feb. 24, 2004
6638826 Power MOS device with buried gate Oct. 28, 2003
6525375 Semiconductor device having trench filled up with gate electrode Feb. 25, 2003
6521919 Semiconductor device of reduced thermal resistance and increased operating area Feb. 18, 2003
6472686 Silicon carbide (SIC) gate turn-off (GTO) thyristor apparatus and method for high power control Oct. 29, 2002
6445035 Power MOS device with buried gate and groove Sep. 3, 2002
6391689 Method of forming a self-aligned thyristor May. 21, 2002
6274892 Devices formable by low temperature direct bonding Aug. 14, 2001
6194290 Methods for making semiconductor devices by low temperature direct bonding Feb. 27, 2001
6153495 Advanced methods for making semiconductor devices by low temperature direct bonding Nov. 28, 2000
6066542 Method for the manufacture of a power semiconductor component May. 23, 2000
5795793 Process for manufacture of MOS gated device with reduced mask count Aug. 18, 1998

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