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Class Information
Number: 257/E21.387
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Multi-step process for manufacture of device of bipolar type, e.g., diodes, transistors, thyristors, resistors, capacitors) (epo) > Device comprising three or more electrodes (epo) > Transistor (epo) > Active layer, e.g., base, is group iii-v compound (epo) > Heterojunction transistor (epo)
Description: This subclass is indented under subclass E21.386. This subclass is substantially the same in scope as ECLA classification H01L21/331P2.

Patents under this class:
1 2 3 4 5 6 7

Patent Number Title Of Patent Date Issued
8507949 Semiconductor device Aug. 13, 2013
8476639 Group III nitride semiconductor and group III nitride semiconductor structure Jul. 2, 2013
8377788 SiGe heterojunction bipolar transistor and method of forming a SiGe heterojunction bipolar transistor Feb. 19, 2013
8343824 Gallium nitride material processing and related device structures Jan. 1, 2013
8309990 Integrated devices on a common compound semiconductor III-V wafer Nov. 13, 2012
8288797 Integrated devices on a common compound semiconductor III-V wafer Oct. 16, 2012
8212288 Compound semiconductor substrate comprising a multilayer buffer layer Jul. 3, 2012
8164104 Light emitting element array and image forming apparatus Apr. 24, 2012
7902571 III-V group compound semiconductor device including a buffer layer having III-V group compound semiconductor crystal Mar. 8, 2011
7893463 Integrated devices on a common compound semiconductor III-V wafer Feb. 22, 2011
7843006 Semiconductor component arrangement having a power transistor and a temperature measuring arrangement Nov. 30, 2010
7821032 III-nitride power semiconductor device Oct. 26, 2010
7816162 Semiconductor device manufacturing method Oct. 19, 2010
7768021 Light emitting element array and image forming apparatus Aug. 3, 2010
7750371 Silicon germanium heterojunction bipolar transistor structure and method Jul. 6, 2010
7687386 Method of forming a semiconductor structure having metal migration semiconductor barrier layers Mar. 30, 2010
7674644 Method for fabrication of group III nitride semiconductor Mar. 9, 2010
7655529 InP based heterojunction bipolar transistors with emitter-up and emitter-down profiles on a common wafer Feb. 2, 2010
7601993 Semiconductor device having ohmic recessed electrode Oct. 13, 2009
7557414 Semiconductor device and method for manufacturing the same Jul. 7, 2009
7518165 Epitaxial nucleation and buffer sequence for via-compatible InAs/AlGaSb HEMTs Apr. 14, 2009
7488663 Semiconductor article and method for manufacturing with reduced base resistance Feb. 10, 2009
7427776 Thin-film transistor and methods Sep. 23, 2008
7414298 Super self-aligned collector device for mono-and hetero bipolar junction transistors, and method of making same Aug. 19, 2008
7354820 Heterojunction bipolar transistor with dielectric assisted planarized contacts and method for fabricating Apr. 8, 2008
7303968 Semiconductor device and method having multiple subcollectors formed on a common wafer Dec. 4, 2007
7297589 Transistor device and method Nov. 20, 2007
7285457 Heterojunction bipolar transistor and manufacturing method thereof Oct. 23, 2007
7264987 Method of fabricating optoelectronic integrated circuit chip Sep. 4, 2007
7256433 Bipolar transistor and a method of manufacturing the same Aug. 14, 2007
7145174 Semiconductor device Dec. 5, 2006
7038244 Semiconductor device and method of manufacturing the same May. 2, 2006
7030429 Hetero-junction bipolar transistor and the method for producing the same Apr. 18, 2006
7015120 Method of fabricating semiconductor devices employing at least one modulation doped quantum well structure and one or more etch stop layers for accurate contact formation Mar. 21, 2006
7001820 Heterojunction bipolar transistor and method for fabricating the same Feb. 21, 2006
6998320 Passivation layer for group III-V semiconductor devices Feb. 14, 2006
6998225 Method of producing compound semiconductor device Feb. 14, 2006
6995407 Photonic digital-to-analog converter employing a plurality of heterojunction thyristor devices Feb. 7, 2006
6992337 Gallium arsenide antimonide (GaAsSB)/indium phosphide (InP) heterojunction bipolar transistor (HBT) having reduced tunneling probability Jan. 31, 2006
6989581 Wide band gap bipolar transistor with reduced thermal runaway Jan. 24, 2006
6989301 Method for manufacturing semiconductor device Jan. 24, 2006
6984871 Semiconductor device with high structural reliability and low parasitic capacitance Jan. 10, 2006
6974969 P-type quantum-well-base bipolar transistor device employing interdigitated base and emitter formed with a capping layer Dec. 13, 2005
6954473 Optoelectronic device employing at least one semiconductor heterojunction thyristor for producing variable electrical/optical delay Oct. 11, 2005
6946355 Method for producing a hetero-bipolar transistor and hetero-bipolar transistor Sep. 20, 2005
6943387 Semiconductor device, manufacturing thereof and power amplifier module Sep. 13, 2005
6924201 Heterojunction bipolar transistor and method of producing the same Aug. 2, 2005
6924203 Double HBT base metal micro-bridge Aug. 2, 2005
6916720 Thin film devices and method for fabricating thin film devices Jul. 12, 2005
6917061 AlGaAs or InGaP low turn-on voltage GaAs-based heterojunction bipolar transistor Jul. 12, 2005

1 2 3 4 5 6 7

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