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Class Information
Number: 257/E21.386
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Multi-step process for manufacture of device of bipolar type, e.g., diodes, transistors, thyristors, resistors, capacitors) (epo) > Device comprising three or more electrodes (epo) > Transistor (epo) > Active layer, e.g., base, is group iii-v compound (epo)
Description: This subclass is indented under subclass E21.37. This subclass is substantially the same in scope as ECLA classification H01L21/331P.










Sub-classes under this class:

Class Number Class Name Patents
257/E21.387 Heterojunction transistor (epo) 346


Patents under this class:

Patent Number Title Of Patent Date Issued
8633569 AlN inter-layers in III-N material grown on REO/silicon substrate Jan. 21, 2014
8344418 Materials for interfacing high-K dielectric layers with III-V semiconductors Jan. 1, 2013
8017420 Method of forming optical waveguide Sep. 13, 2011
7989280 Dielectric interface for group III-V semiconductor device Aug. 2, 2011
7989238 Group III nitride-based compound semiconductor light-emitting device and production method therefor Aug. 2, 2011
7687386 Method of forming a semiconductor structure having metal migration semiconductor barrier layers Mar. 30, 2010
7674644 Method for fabrication of group III nitride semiconductor Mar. 9, 2010
7224026 Nanoelectronic devices and circuits May. 29, 2007
6245687 Precision wide band gap semiconductor etching Jun. 12, 2001











 
 
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