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Class Information
Number: 257/E21.386
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Multi-step process for manufacture of device of bipolar type, e.g., diodes, transistors, thyristors, resistors, capacitors) (epo) > Device comprising three or more electrodes (epo) > Transistor (epo) > Active layer, e.g., base, is group iii-v compound (epo)
Description: This subclass is indented under subclass E21.37. This subclass is substantially the same in scope as ECLA classification H01L21/331P.


Sub-classes under this class:

Class Number Class Name Patents
257/E21.387 Heterojunction transistor (epo) 323


Patents under this class:

Patent Number Title Of Patent Date Issued
7224026 Nanoelectronic devices and circuits May. 29, 2007
6245687 Precision wide band gap semiconductor etching Jun. 12, 2001



 
 
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