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Class Information
Number: 257/E21.385
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Multi-step process for manufacture of device of bipolar type, e.g., diodes, transistors, thyristors, resistors, capacitors) (epo) > Device comprising three or more electrodes (epo) > Transistor (epo) > Field-effect controlled bipolar-type transi stor, e.g., insulated gate bipolar transistor (igbt) (epo) > Vertical insulated gate bipolar transistor (epo) > With recess formed by etching in source/emitter contact region (epo)
Description: This subclass is indented under subclass E21.383. This subclass is substantially the same in scope as ECLA classification H01L21/331G2B.










Patents under this class:

Patent Number Title Of Patent Date Issued
8609492 Vertical memory cell Dec. 17, 2013
8586435 Fabrication of MOSFET device with reduced breakdown voltage Nov. 19, 2013
8377785 Planar field effect transistor structure having an angled crystallographic etch-defined source/drain recess and a method of forming the transistor structure Feb. 19, 2013
8299455 Semiconductor structures having improved contact resistance Oct. 30, 2012
8198157 Methods of forming non-volatile memory devices including dummy word lines Jun. 12, 2012
8154050 Semiconductor device with semiconductor epitaxial layers buried in source/drain regions, and fabrication method of the same Apr. 10, 2012
8071442 Transistor with embedded Si/Ge material having reduced offset to the channel region Dec. 6, 2011
7986003 Semiconductor device and manufacturing method thereof Jul. 26, 2011
7964897 Direct contact to area efficient body tie process flow Jun. 21, 2011
7800183 Semiconductor device Sep. 21, 2010
7696019 Semiconductor devices and methods of manufacturing thereof Apr. 13, 2010
7456466 NAND flash memory device and method of manufacturing the same Nov. 25, 2008
6646304 Universal semiconductor wafer for high-voltage semiconductor components Nov. 11, 2003
6630711 Semiconductor structures with trench contacts Oct. 7, 2003
6509607 Semiconductor device with reduced source diffusion distance and method of making same Jan. 21, 2003
6501128 Insulated gate transistor and the method of manufacturing the same Dec. 31, 2002
6437399 Semiconductor structures with trench contacts Aug. 20, 2002
6225643 SOI cell and method for producing it May. 1, 2001
6214673 Process for forming vertical semiconductor device having increased source contact area Apr. 10, 2001
6165848 Method for the production of a MOS-controlled power semiconductor component Dec. 26, 2000
6037628 Semiconductor structures with trench contacts Mar. 14, 2000
5910668 Method of making a insulated gate bipolar transistor with high-energy P+ implant and silicon-etch contact Jun. 8, 1999
5891776 Methods of forming insulated-gate semiconductor devices using self-aligned trench sidewall diffusion techniques Apr. 6, 1999
5879968 Process for manufacture of a P-channel MOS gated device with base implant through the contact window Mar. 9, 1999
5869864 Field effect controlled semiconductor component Feb. 9, 1999
5843796 Method of making an insulated gate bipolar transistor with high-energy P+ i m Dec. 1, 1998
5801417 Self-aligned power MOSFET device with recessed gate and source Sep. 1, 1998
5763902 Insulated gate bipolar transistor having a trench and a method for production thereof Jun. 9, 1998
5583060 Method for manufacturing field effect controlled semiconductor components Dec. 10, 1996
5528058 IGBT device with platinum lifetime control and reduced gaw Jun. 18, 1996
5408117 Semiconductor device and method of fabricating the same Apr. 18, 1995
5283202 IGBT device with platinum lifetime control having gradient or profile tailored platinum diffusion regions Feb. 1, 1994
5283201 High density power device fabrication process Feb. 1, 1994
5262336 IGBT process to produce platinum lifetime control Nov. 16, 1993
5178370 Conductivity modulated insulated gate semiconductor device Jan. 12, 1993
5008720 Semiconductor device with stepped well Apr. 16, 1991
4809047 Insulated-gate semiconductor device with improved base-to-source electrode short and method of fabricating said short Feb. 28, 1989











 
 
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