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Class Information
Number: 257/E21.383
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Multi-step process for manufacture of device of bipolar type, e.g., diodes, transistors, thyristors, resistors, capacitors) (epo) > Device comprising three or more electrodes (epo) > Transistor (epo) > Field-effect controlled bipolar-type transi stor, e.g., insulated gate bipolar transistor (igbt) (epo) > Vertical insulated gate bipolar transistor (epo)
Description: This subclass is indented under subclass E21.382. This subclass is substantially the same in scope as ECLA classification H01L21/331G2.










Sub-classes under this class:

Class Number Class Name Patents
257/E21.385 With recess formed by etching in source/emitter contact region (epo) 37
257/E21.384 With recessed gate (epo) 201


Patents under this class:
1 2 3 4

Patent Number Title Of Patent Date Issued
8643056 Power semiconductor device and method of manufacturing the same Feb. 4, 2014
8609502 Method of manufacturing semiconductor device including insulated gate bipolar transistor and diode Dec. 17, 2013
8519475 Semiconductor device Aug. 27, 2013
8507352 Method of manufacturing semiconductor device including insulated gate bipolar transistor and diode Aug. 13, 2013
8450793 Semiconductor module May. 28, 2013
8435852 HBT with configurable emitter May. 7, 2013
8344437 Semiconductor device with vertical channel transistor Jan. 1, 2013
8178947 Semiconductor device May. 15, 2012
8168480 Fabricating method for forming integrated structure of IGBT and diode May. 1, 2012
8049270 Semiconductor device Nov. 1, 2011
7986003 Semiconductor device and manufacturing method thereof Jul. 26, 2011
7968940 Insulated gate bipolar transistor device comprising a depletion-mode MOSFET Jun. 28, 2011
7932583 Reduced free-charge carrier lifetime device Apr. 26, 2011
7932538 Insulated gate bipolar transistor and method of fabricating the same Apr. 26, 2011
7892896 Semiconductor device having bulb-shaped recess gate and method for fabricating the same Feb. 22, 2011
7846805 Self-aligned vertical PNP transistor for high performance SiGe CBiCMOS process Dec. 7, 2010
7800183 Semiconductor device Sep. 21, 2010
7719087 Semiconductor device May. 18, 2010
7645659 Power semiconductor device using silicon substrate as field stop layer and method of manufacturing the same Jan. 12, 2010
7601584 Semiconductor array and method for manufacturing a semiconductor array Oct. 13, 2009
7572683 Semiconductor device, the method of manufacturing the same, and two-way switching device using the semiconductor devices Aug. 11, 2009
7547585 P channel Rad Hard MOSFET with enhancement implant Jun. 16, 2009
7544570 Vertical-type metal insulator semiconductor field effect transistor device, and production method for manufacturing such transistor device Jun. 9, 2009
7534666 High voltage non punch through IGBT for switch mode power supplies May. 19, 2009
7507608 IGBT with amorphous silicon transparent collector Mar. 24, 2009
7498619 Power electronic device of multi-drain type integrated on a semiconductor substrate and relative manufacturing process Mar. 3, 2009
7489003 Semiconductor device having a channel extending vertically Feb. 10, 2009
7488662 Self-aligned vertical PNP transistor for high performance SiGe CBiCMOS process Feb. 10, 2009
7482205 Process for resurf diffusion for high voltage MOSFET Jan. 27, 2009
7276754 Annular gate and technique for fabricating an annular gate Oct. 2, 2007
7135739 Vertical-type metal insulator semiconductor field effect transistor device, and production method for manufacturing such transistor device Nov. 14, 2006
7067900 Insulated gate bipolar transistor having a reduced tail current and method of fabricating the same Jun. 27, 2006
7049186 Insulated gate type semiconductor device having a diffusion region contacting bottom and side portions of trenches May. 23, 2006
7042046 Super-junction semiconductor device and method of manufacturing the same May. 9, 2006
7002205 Super-junction semiconductor device and method of manufacturing the same Feb. 21, 2006
6949439 Semiconductor power component and a method of producing same Sep. 27, 2005
6936892 Semiconductor device with alternating conductivity type layer and method of manufacturing the same Aug. 30, 2005
6936908 Forward and reverse blocking devices Aug. 30, 2005
6927167 Method for manufacturing semiconductor device having controlled surface roughness Aug. 9, 2005
6870200 Insulated gate type semiconductor device having a diffusion region contacting bottom and side portions of trenches Mar. 22, 2005
6841437 Method of forming a vertical power semiconductor device and structure therefor Jan. 11, 2005
6838321 SEMICONDUCTOR SUBSTRATE WITH DEFECTS REDUCED OR REMOVED AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE CAPABLE OF BIDIRECTIONALLY RETAINING BREAKDOWN VOLTAGE AND METHOD OF MANU Jan. 4, 2005
6803294 Semiconductor wafer and manufacturing method of semiconductor device Oct. 12, 2004
6798025 Insulated gate bipolar transistor Sep. 28, 2004
6787885 Low temperature hydrophobic direct wafer bonding Sep. 7, 2004
6762080 Method of manufacturing a semiconductor device having a cathode and an anode from a wafer Jul. 13, 2004
6762097 Semiconductor device and method for manufacturing the same Jul. 13, 2004
6759301 Semiconductor device and method for manufacturing the same Jul. 6, 2004
6734497 Insulated gate bipolar transistor, semiconductor device, method of manufacturing insulated-gate bipolar transistor, and method of manufacturing semiconductor device May. 11, 2004
6724042 Super-junction semiconductor device Apr. 20, 2004

1 2 3 4










 
 
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