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Class Information
Number: 257/E21.38
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Multi-step process for manufacture of device of bipolar type, e.g., diodes, transistors, thyristors, resistors, capacitors) (epo) > Device comprising three or more electrodes (epo) > Transistor (epo) > Silicon vertical transistor (epo) > Where main current goes through whole of silicon substrate, e.g., power bipolar transistor (epo)
Description: This subclass is indented under subclass E21.375. This subclass is substantially the same in scope as ECLA classification H01L21/331F10.










Sub-classes under this class:

Class Number Class Name Patents
257/E21.381 With a multi- emitter, e.g., interdigitated, multicellular, distributed (epo) 52


Patents under this class:

Patent Number Title Of Patent Date Issued
8610208 Semiconductor device Dec. 17, 2013
8399907 VTS insulated gate bipolar transistor Mar. 19, 2013
8237147 Switching element and manufacturing method thereof Aug. 7, 2012
7989896 Semiconductor device and method of fabricating the same Aug. 2, 2011
7935553 Method for fabricating high density pillar structures by double patterning using positive photoresist May. 3, 2011
7834407 Semiconductor device Nov. 16, 2010
7732303 Method for recycling of ion implantation monitor wafers Jun. 8, 2010
7385273 Power semiconductor device Jun. 10, 2008
7320946 Method for generating dynamic mask pattern Jan. 22, 2008
7276423 III-nitride device and method with variable epitaxial growth direction Oct. 2, 2007
7276405 Power semiconductor device having high breakdown voltage, low on-resistance and small switching loss and method of forming the same Oct. 2, 2007
6784465 Vertical power component manufacturing method Aug. 31, 2004
6579782 Vertical power component manufacturing method Jun. 17, 2003
6355971 Semiconductor switch devices having a region with three distinct zones and their manufacture Mar. 12, 2002
6346444 Power semiconductor device using semi-insulating polycrystalline silicon and fabrication method thereof Feb. 12, 2002
6281548 Power semiconductor device using semi-insulating polycrystalline silicon Aug. 28, 2001
6198156 Bipolar power transistors and manufacturing method Mar. 6, 2001
6114212 Methods of fabricating bipolar junction transistors having an increased safe operating area Sep. 5, 2000
6093955 Power semiconductor device Jul. 25, 2000
6040219 Method of fabricating power semiconductor device using semi-insulating polycrystalline silicon (SIPOS) film Mar. 21, 2000
6028329 Bipolar junction transistor device and a method of fabricating the same Feb. 22, 2000
5939769 Bipolar power transistor with high collector breakdown voltage and related manufacturing process Aug. 17, 1999
5895249 Integrated edge structure for high voltage semiconductor devices and related manufacturing process Apr. 20, 1999
5872391 Bipolar junction transistors having an increased safe operating area Feb. 16, 1999
5750443 Method of manufacturing semiconductor device May. 12, 1998
5688714 Method of fabricating a semiconductor device having a top layer and base layer joined by wafer bonding Nov. 18, 1997
5629555 Integrated structure bipolar transistors with controlled storage time May. 13, 1997
5624852 Manufacturing process for obtaining integrated structure bipolar transistors with controlled storage time Apr. 29, 1997
5569612 Process for manufacturing a bipolar power transistor having a high breakdown voltage Oct. 29, 1996
5489799 Integrated edge structure for high voltage semiconductor devices and related manufacturing processs Feb. 6, 1996
5482873 Method for fabricating a bipolar power transistor Jan. 9, 1996
5416354 Inverted epitaxial process semiconductor devices May. 16, 1995
5397913 Biopolar/Darlington transistor having enhanced comprehensive electricity characteristics Mar. 14, 1995
5313092 Semiconductor power device having walls of an inverted mesa shape to improve power handling capability May. 17, 1994
5164218 Semiconductor device and a method for producing the same Nov. 17, 1992
4971929 Method of making RF transistor employing dual metallization with self-aligned first metal Nov. 20, 1990
4663820 Metallizing process for semiconductor devices May. 12, 1987
4662062 Method for making bipolar transistor having a graft-base configuration May. 5, 1987
4610730 Fabrication process for bipolar devices Sep. 9, 1986
4581319 Method for the manufacture of bipolar transistor structures with self-adjusting emitter and base regions for extreme high frequency circuits Apr. 8, 1986
4483738 Method for manufacturing bipolar planar transistors Nov. 20, 1984











 
 
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