| |
 |
|
Class Information
Number: 257/E21.379
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Multi-step process for manufacture of device of bipolar type, e.g., diodes, transistors, thyristors, resistors, capacitors) (epo) > Device comprising three or more electrodes (epo) > Transistor (epo) > Silicon vertical transistor (epo) > With single crystalline emitter, collector or base including extrinsic, link or graft base formed on th e silicon substrate, e.g., by epitaxy, recrystallization, after insulating device isolation (epo)
Description: This subclass is indented under subclass E21.375. This subclass is substantially the same in scope as ECLA classification H01L21/331F8.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7618871 |
Method for the production of a bipolar transistor comprising an improved base terminal |
Nov. 17, 2009 |
| 7615455 |
Integrated circuit bipolar transistor |
Nov. 10, 2009 |
| 7611954 |
Bipolar transistor self-alignment with raised extrinsic base extension and methods of forming same |
Nov. 3, 2009 |
| 7557010 |
Method to improve writer leakage in a SiGe bipolar device |
Jul. 7, 2009 |
| 7547914 |
Single-crystal layer on a dielectric layer |
Jun. 16, 2009 |
| 7491617 |
Transistor structure with minimized parasitics and method of fabricating the same |
Feb. 17, 2009 |
| 7378324 |
Selective links in silicon hetero-junction bipolar transistors using carbon doping and method of forming same |
May. 27, 2008 |
| 7368361 |
Bipolar junction transistors and method of manufacturing the same |
May. 6, 2008 |
| 7364990 |
Epitaxial crystal growth process in the manufacturing of a semiconductor device |
Apr. 29, 2008 |
| 7348246 |
Methods of fabricating non-volatile memory devices including divided charge storage structures |
Mar. 25, 2008 |
| 7341878 |
Wavelength-converted semiconductor light emitting device |
Mar. 11, 2008 |
| 7323390 |
Semiconductor device and method for production thereof |
Jan. 29, 2008 |
| 7282418 |
Method for fabricating a self-aligned bipolar transistor without spacers |
Oct. 16, 2007 |
| 7265409 |
Non-volatile semiconductor memory |
Sep. 4, 2007 |
| 7075126 |
Transistor structure with minimized parasitics and method of fabricating the same |
Jul. 11, 2006 |
| 7071500 |
Semiconductor device and manufacturing method for the same |
Jul. 4, 2006 |
| 7064417 |
Semiconductor device including a bipolar transistor |
Jun. 20, 2006 |
| 7064361 |
NPN transistor having reduced extrinsic base resistance and improved manufacturability |
Jun. 20, 2006 |
| 7041564 |
Method for fabricating a self-aligned bipolar transistor |
May. 9, 2006 |
| 7037798 |
Bipolar transistor structure with self-aligned raised extrinsic base and methods |
May. 2, 2006 |
| 7038298 |
High f.sub.T and f.sub.max bipolar transistor and method of making same |
May. 2, 2006 |
| 7005359 |
Bipolar junction transistor with improved extrinsic base region and method of fabrication |
Feb. 28, 2006 |
| 7002221 |
Bipolar transistor having raised extrinsic base with selectable self-alignment and methods of forming same |
Feb. 21, 2006 |
| 6979626 |
Method for fabricating a self-aligned bipolar transistor having increased manufacturability and related structure |
Dec. 27, 2005 |
| 6979884 |
Bipolar transistor having self-aligned silicide and a self-aligned emitter contact border |
Dec. 27, 2005 |
| 6962842 |
Method of removing a sacrificial emitter feature in a BICMOS process with a super self-aligned BJT |
Nov. 8, 2005 |
| 6960820 |
Bipolar transistor self-alignment with raised extrinsic base extension and methods of forming same |
Nov. 1, 2005 |
| 6949438 |
Method of fabricating a bipolar junction transistor |
Sep. 27, 2005 |
| 6936519 |
Double polysilicon bipolar transistor and method of manufacture therefor |
Aug. 30, 2005 |
| 6917077 |
Protection diode for improved ruggedness of a radio frequency power transistor and self-defining method to manufacture such protection diode |
Jul. 12, 2005 |
| 6911681 |
Method of base formation in a BiCMOS process |
Jun. 28, 2005 |
| 6911368 |
Arrangement for preventing short-circuiting in a bipolar double-poly transistor and a method of fabricating such an arrangement |
Jun. 28, 2005 |
| 6900519 |
Diffused extrinsic base and method for fabrication |
May. 31, 2005 |
| 6900105 |
Semiconductor device and method of manufacture |
May. 31, 2005 |
| 6897547 |
Semiconductor device including bipolar junction transistor, and production method therefor |
May. 24, 2005 |
| 6893931 |
Reducing extrinsic base resistance in an NPN transistor |
May. 17, 2005 |
| 6893933 |
Bipolar transistors with low-resistance emitter contacts |
May. 17, 2005 |
| 6894328 |
Self-aligned bipolar transistor having recessed spacers and method for fabricating same |
May. 17, 2005 |
| 6888221 |
BICMOS technology on SIMOX wafers |
May. 3, 2005 |
| 6881638 |
Method of fabricating a bipolar junction transistor |
Apr. 19, 2005 |
| 6869853 |
Fabrication of a bipolar transistor using a sacrificial emitter |
Mar. 22, 2005 |
| 6869854 |
Diffused extrinsic base and method for fabrication |
Mar. 22, 2005 |
| 6869852 |
Self-aligned raised extrinsic base bipolar transistor structure and method |
Mar. 22, 2005 |
| 6867105 |
Bipolar transistor and method of fabricating a bipolar transistor |
Mar. 15, 2005 |
| 6867440 |
Self-aligned bipolar transistor without spacers and method for fabricating same |
Mar. 15, 2005 |
| 6864560 |
Bipolar transistor structure with a shallow isolation extension region providing reduced parasitic capacitance |
Mar. 8, 2005 |
| 6858485 |
Method for creation of a very narrow emitter feature |
Feb. 22, 2005 |
| 6855612 |
Method for fabricating a bipolar transistor |
Feb. 15, 2005 |
| 6856000 |
Reduce 1/f noise in NPN transistors without degrading the properties of PNP transistors in integrated circuit technologies |
Feb. 15, 2005 |
| 6830982 |
Method for reducing extrinsic base resistance and improving manufacturability in an NPN transistor |
Dec. 14, 2004 |
|
|
|
