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Class Information
Number: 257/E21.379
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Multi-step process for manufacture of device of bipolar type, e.g., diodes, transistors, thyristors, resistors, capacitors) (epo) > Device comprising three or more electrodes (epo) > Transistor (epo) > Silicon vertical transistor (epo) > With single crystalline emitter, collector or base including extrinsic, link or graft base formed on th e silicon substrate, e.g., by epitaxy, recrystallization, after insulating device isolation (epo)
Description: This subclass is indented under subclass E21.375. This subclass is substantially the same in scope as ECLA classification H01L21/331F8.

Patents under this class:
1 2 3 4 5

Patent Number Title Of Patent Date Issued
8609501 Fluorine implant under isolation dielectric structures to improve bipolar transistor performance and matching Dec. 17, 2013
8609451 Insitu epitaxial deposition of front and back junctions in single crystal silicon solar cells Dec. 17, 2013
8597993 Electrostatic discharge (ESD) device and method of fabricating Dec. 3, 2013
8541812 Semiconductor device and method of manufacture thereof Sep. 24, 2013
8476675 Semiconductor device and method of manufacture thereof Jul. 2, 2013
8318555 Method of producing a hybrid substrate having a continuous buried electrically insulating layer Nov. 27, 2012
8227326 Laser crystallization of amorphous silicon layer Jul. 24, 2012
8216863 Method for producing a field-emitter array with controlled apex sharpness Jul. 10, 2012
8063438 Vertical-type semiconductor devices Nov. 22, 2011
8039333 Semiconductor device and method of fabricating the same Oct. 18, 2011
8003423 Method for manufacturing a poly-crystal silicon photovoltaic device using horizontal metal induced crystallization Aug. 23, 2011
7829358 System and method for emitter layer shaping Nov. 9, 2010
7795703 Selective and non-selective epitaxy for base intergration in a BiCMOS process Sep. 14, 2010
7781295 System and method for providing a single deposition emitter/base in a bipolar junction transistor Aug. 24, 2010
7741680 Electro-static discharge and latchup resistant semiconductor device Jun. 22, 2010
7678621 Crystallization pattern and method for crystallizing amorphous silicon using the same Mar. 16, 2010
7618871 Method for the production of a bipolar transistor comprising an improved base terminal Nov. 17, 2009
7615455 Integrated circuit bipolar transistor Nov. 10, 2009
7611954 Bipolar transistor self-alignment with raised extrinsic base extension and methods of forming same Nov. 3, 2009
7557010 Method to improve writer leakage in a SiGe bipolar device Jul. 7, 2009
7547914 Single-crystal layer on a dielectric layer Jun. 16, 2009
7491617 Transistor structure with minimized parasitics and method of fabricating the same Feb. 17, 2009
7378324 Selective links in silicon hetero-junction bipolar transistors using carbon doping and method of forming same May. 27, 2008
7368361 Bipolar junction transistors and method of manufacturing the same May. 6, 2008
7364990 Epitaxial crystal growth process in the manufacturing of a semiconductor device Apr. 29, 2008
7348246 Methods of fabricating non-volatile memory devices including divided charge storage structures Mar. 25, 2008
7341878 Wavelength-converted semiconductor light emitting device Mar. 11, 2008
7323390 Semiconductor device and method for production thereof Jan. 29, 2008
7282418 Method for fabricating a self-aligned bipolar transistor without spacers Oct. 16, 2007
7265409 Non-volatile semiconductor memory Sep. 4, 2007
7075126 Transistor structure with minimized parasitics and method of fabricating the same Jul. 11, 2006
7071500 Semiconductor device and manufacturing method for the same Jul. 4, 2006
7064361 NPN transistor having reduced extrinsic base resistance and improved manufacturability Jun. 20, 2006
7064417 Semiconductor device including a bipolar transistor Jun. 20, 2006
7041564 Method for fabricating a self-aligned bipolar transistor May. 9, 2006
7038298 High f.sub.T and f.sub.max bipolar transistor and method of making same May. 2, 2006
7037798 Bipolar transistor structure with self-aligned raised extrinsic base and methods May. 2, 2006
7005359 Bipolar junction transistor with improved extrinsic base region and method of fabrication Feb. 28, 2006
7002221 Bipolar transistor having raised extrinsic base with selectable self-alignment and methods of forming same Feb. 21, 2006
6979884 Bipolar transistor having self-aligned silicide and a self-aligned emitter contact border Dec. 27, 2005
6979626 Method for fabricating a self-aligned bipolar transistor having increased manufacturability and related structure Dec. 27, 2005
6962842 Method of removing a sacrificial emitter feature in a BICMOS process with a super self-aligned BJT Nov. 8, 2005
6960820 Bipolar transistor self-alignment with raised extrinsic base extension and methods of forming same Nov. 1, 2005
6949438 Method of fabricating a bipolar junction transistor Sep. 27, 2005
6936519 Double polysilicon bipolar transistor and method of manufacture therefor Aug. 30, 2005
6917077 Protection diode for improved ruggedness of a radio frequency power transistor and self-defining method to manufacture such protection diode Jul. 12, 2005
6911681 Method of base formation in a BiCMOS process Jun. 28, 2005
6911368 Arrangement for preventing short-circuiting in a bipolar double-poly transistor and a method of fabricating such an arrangement Jun. 28, 2005
6900519 Diffused extrinsic base and method for fabrication May. 31, 2005
6900105 Semiconductor device and method of manufacture May. 31, 2005

1 2 3 4 5

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