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Class Information
Number: 257/E21.374
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Multi-step process for manufacture of device of bipolar type, e.g., diodes, transistors, thyristors, resistors, capacitors) (epo) > Device comprising three or more electrodes (epo) > Transistor (epo) > Schottky transistor (epo)
Description: This subclass is indented under subclass E21.037. This subclass is substantially the same in scope as ECLA classification H01L21/331D.










Patents under this class:

Patent Number Title Of Patent Date Issued
8410572 Bipolar transistor with emitter and/or collector contact structure forming a Schottky contact and method of production Apr. 2, 2013
8183103 Integrated circuit structure including schottky diode and method for manufacturing the same May. 22, 2012
8003504 Structure and method for fabrication of field effect transistor gates with or without field plates Aug. 23, 2011
7928480 Semiconductor device Apr. 19, 2011
7829448 Structure of high electron mobility transistor, a device comprising the structure and a method of producing the same Nov. 9, 2010
7646043 Transistors having buried p-type layers coupled to the gate Jan. 12, 2010
7605065 Schottky barrier tunnel single electron transistor and method of manufacturing the same Oct. 20, 2009
7586150 Semiconductor devices with local recess channel transistors and methods of manufacturing the same Sep. 8, 2009











 
 
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