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Class Information
Number: 257/E21.372
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Multi-step process for manufacture of device of bipolar type, e.g., diodes, transistors, thyristors, resistors, capacitors) (epo) > Device comprising three or more electrodes (epo) > Transistor (epo) > Bipolar thin film transistor (epo)
Description: This subclass is indented under subclass E21.37. This subclass is substantially the same in scope as ECLA classification H01L21/331E.










Patents under this class:
1 2 3 4

Patent Number Title Of Patent Date Issued
5856700 Semiconductor device with doped semiconductor and dielectric trench sidewall layers Jan. 5, 1999
5851858 Method for producing a multiplicity of microelectronic circuits on SOI Dec. 22, 1998
5846858 SOI-BiCMOS method Dec. 8, 1998
5763931 Semiconductor device with SOI structure and fabrication method thereof Jun. 9, 1998
5728613 Method of using an insulator spacer to form a narrow base width lateral bipolar junction transistor Mar. 17, 1998
5723370 FET and/or bipolar devices formed in thin vertical silicon on insulator (SOI) structures Mar. 3, 1998
5714397 Process for producing lateral bipolar transistor Feb. 3, 1998
5705839 Gate spacer to control the base width of a lateral bipolar junction transistor using SOI technology Jan. 6, 1998
5663078 Method for fabricating transistors using crystalline silicon devices on glass Sep. 2, 1997
5637909 Semiconductor device and method of manufacturing the same Jun. 10, 1997
5637513 Fabrication method of semiconductor device with SOI structure Jun. 10, 1997
5635411 Method of making semiconductor apparatus Jun. 3, 1997
5633190 Semiconductor device and method for making the same May. 27, 1997
5629217 Method and apparatus for SOI transistor May. 13, 1997
5629554 Semiconductor device with a bipolar transistor formed in a layer of semiconductor material provided on an insulating substrate May. 13, 1997
5610087 Method for fabricating narrow base width lateral bipolar junction transistor, on SOI layer Mar. 11, 1997
H1637 Laser-assisted fabrication of bipolar transistors in silicon-on-sapphire (SOS) Mar. 4, 1997
5587599 Bipolar transistor and manufacturing method Dec. 24, 1996
5587612 Semiconductor device having semiconductor active and dummy regions with the dummy regions lower in height than the active regions Dec. 24, 1996
5581101 FET and/or bipolar devices formed in thin vertical silicon on insulator (SOI) structures Dec. 3, 1996
5580797 Method of making SOI Transistor Dec. 3, 1996
5567631 Method of forming gate spacer to control the base width of a lateral bipolar junction transistor using SOI technology Oct. 22, 1996
5561073 Method of fabricating an isolation trench for analog bipolar devices in harsh environments Oct. 1, 1996
5548156 Method and apparatus for SOI transistor Aug. 20, 1996
5525533 Method of making a low voltage coefficient capacitor Jun. 11, 1996
5510647 Semiconductor device and method of manufacturing the same Apr. 23, 1996
5460982 Method for manufacturing lateral bipolar transistors Oct. 24, 1995
5451798 Semiconductor device and its fabrication method Sep. 19, 1995
5444014 Method for fabricating semiconductor device Aug. 22, 1995
5430317 Semiconductor device Jul. 4, 1995
5414276 Transistors using crystalline silicon devices on glass May. 9, 1995
5407843 Method for manufacturing lateral bipolar transistors Apr. 18, 1995
5395775 Method for manufacturing lateral bipolar transistors Mar. 7, 1995
5389561 Method for making SOI type bipolar transistor Feb. 14, 1995
5376823 Lateral bipolar transistor and method of producing the same Dec. 27, 1994
5374568 Method for forming a base link in a bipolar transistor Dec. 20, 1994
5374567 Operational amplifier using bipolar junction transistors in silicon-on-sapphire Dec. 20, 1994
5362659 Method for fabricating vertical bipolar junction transistors in silicon bonded to an insulator Nov. 8, 1994
5352624 SOI type semiconductor device and manufacturing method therefor Oct. 4, 1994
5344785 Method of forming high speed, high voltage fully isolated bipolar transistors on a SOI substrate Sep. 6, 1994
5323055 Semiconductor device with buried conductor and interconnection layer Jun. 21, 1994
5294823 SOI BICMOS process Mar. 15, 1994
5164326 Complementary bipolar and CMOS on SOI Nov. 17, 1992
5102809 SOI BICMOS process Apr. 7, 1992
5100810 Manufacturing method of semiconductor devices Mar. 31, 1992
5087580 Self-aligned bipolar transistor structure and fabrication process Feb. 11, 1992
5075737 Thin film semiconductor device Dec. 24, 1991
5073506 Method for making a self-aligned lateral bipolar SOI transistor Dec. 17, 1991
5049513 Bi CMOS/SOI process flow Sep. 17, 1991
4922315 Control gate lateral silicon-on-insulator bipolar transistor May. 1, 1990

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