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Class Information
Number: 257/E21.371
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Multi-step process for manufacture of device of bipolar type, e.g., diodes, transistors, thyristors, resistors, capacitors) (epo) > Device comprising three or more electrodes (epo) > Transistor (epo) > Heterojunction transistor (epo)
Description: This subclass is indented under subclass E21.37. This subclass is substantially the same in scope as ECLA classification H01L21/331B.










Patents under this class:
1 2 3 4 5 6 7 8

Patent Number Title Of Patent Date Issued
8652919 Tunable semiconductor device Feb. 18, 2014
8574994 HBT with emitter electrode having planar side walls Nov. 5, 2013
8575659 Carbon-beryllium combinationally doped semiconductor Nov. 5, 2013
8530934 Integrated circuit structures containing a strain-compensated compound semiconductor layer and methods and systems related thereto Sep. 10, 2013
8524551 Method of manufacturing heterojunction bipolar transistor and heterojunction bipolar transistor Sep. 3, 2013
8507949 Semiconductor device Aug. 13, 2013
8450179 Semiconductor device having a first bipolar device and a second bipolar device and method for fabrication May. 28, 2013
8426287 Method of manufacturing semiconductor device, solid-state imaging device, and solid-state imaging apparatus Apr. 23, 2013
8415762 Semiconductor device for performing photoelectric conversion Apr. 9, 2013
8338863 Vertical heterojunction bipolar transistors with reduced base-collector junction capacitance Dec. 25, 2012
8304302 Photovoltaic device using single wall carbon nanotubes and method of fabricating the same Nov. 6, 2012
8298901 Method for manufacturing bipolar transistors Oct. 30, 2012
8242500 Method of manufacturing heterojunction bipolar transistor and heterojunction bipolar transistor Aug. 14, 2012
8212288 Compound semiconductor substrate comprising a multilayer buffer layer Jul. 3, 2012
8159287 Transistor device and method Apr. 17, 2012
8148737 Light emitting device, light emitting device package and lighting system Apr. 3, 2012
8133791 Method of manufacturing a bipolar transistor and bipolar transistor obtained therewith Mar. 13, 2012
8026146 Method of manufacturing a bipolar transistor Sep. 27, 2011
8017975 Semiconductor device Sep. 13, 2011
RE42423 Contact method for thin silicon carbide epitaxial layer and semiconductor devices formed by those methods Jun. 7, 2011
7943450 Gated resonant tunneling diode May. 17, 2011
7935603 Symmetric non-intrusive and covert technique to render a transistor permanently non-operable May. 3, 2011
7923340 Method to reduce collector resistance of a bipolar transistor and integration into a standard CMOS flow Apr. 12, 2011
7915640 Heterojunction semiconductor device and method of manufacturing Mar. 29, 2011
7902571 III-V group compound semiconductor device including a buffer layer having III-V group compound semiconductor crystal Mar. 8, 2011
7875523 HBT with emitter electrode having planar side walls Jan. 25, 2011
7843006 Semiconductor component arrangement having a power transistor and a temperature measuring arrangement Nov. 30, 2010
7842973 Semiconductor device and manufacturing method of the same Nov. 30, 2010
7821032 III-nitride power semiconductor device Oct. 26, 2010
7776704 Method to build self-aligned NPN in advanced BiCMOS technology Aug. 17, 2010
7755161 Semiconductor devices Jul. 13, 2010
7723753 Semiconductor device and manufacturing method of the same May. 25, 2010
7700423 Process for manufacturing epitaxial wafers for integrated devices on a common compound semiconductor III-V wafer Apr. 20, 2010
7696034 Methods of base formation in a BiCOMS process Apr. 13, 2010
7678628 Methods of fabricating nitride-based transistors with a cap layer and a recessed gate Mar. 16, 2010
7651919 Bandgap and recombination engineered emitter layers for SiGe HBT performance optimization Jan. 26, 2010
7648853 Dual channel heterostructure Jan. 19, 2010
7645666 Method of making a semiconductor device Jan. 12, 2010
7638820 Contact method for thin silicon carbide epitaxial layer and semiconductor devices formed by those methods Dec. 29, 2009
7615455 Integrated circuit bipolar transistor Nov. 10, 2009
7598148 Non-self-aligned heterojunction bipolar transistor and a method for preparing a non-self-aligned heterojunction bipolar transistor Oct. 6, 2009
7582949 Semiconductor devices Sep. 1, 2009
7579634 Semiconductor device including a field effect transistor Aug. 25, 2009
7557010 Method to improve writer leakage in a SiGe bipolar device Jul. 7, 2009
7557414 Semiconductor device and method for manufacturing the same Jul. 7, 2009
7538409 Semiconductor devices May. 26, 2009
7521734 Semiconductor device with reduced base resistance Apr. 21, 2009
7518165 Epitaxial nucleation and buffer sequence for via-compatible InAs/AlGaSb HEMTs Apr. 14, 2009
7491617 Transistor structure with minimized parasitics and method of fabricating the same Feb. 17, 2009
7488638 Method for fabricating a voltage-stable PMOSFET semiconductor structure Feb. 10, 2009

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