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Class Information
Number: 257/E21.369
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Multi-step process for manufacture of device of bipolar type, e.g., diodes, transistors, thyristors, resistors, capacitors) (epo) > Device comprising three or more electrodes (epo)
Description: This subclass is indented under subclass E21.35. This subclass is substantially the same in scope as ECLA classification H01L21/33.










Sub-classes under this class:

Class Number Class Name Patents
257/E21.388 Thyristor (epo) 74
257/E21.37 Transistor (epo) 83


Patents under this class:

Patent Number Title Of Patent Date Issued
8410554 Method, structure and design structure for customizing history effects of SOI circuits Apr. 2, 2013
8174054 Field effect transistor with interdigitated fingers and method of manufacturing thereof May. 8, 2012
7422970 Method for modifying circuit within substrate Sep. 9, 2008
5465001 Electronic component capable of negative dynamic resistance Nov. 7, 1995











 
 
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