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Class Information
Number: 257/E21.368
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Multi-step process for manufacture of device of bipolar type, e.g., diodes, transistors, thyristors, resistors, capacitors) (epo) > Device comprising one or two electrodes, e.g., diode, resistor or capacitor with pn or schottky junctions (epo) > Active layer is group iii-v compound (epo) > Diode (epo) > Schottky diode (epo)
Description: This subclass is indented under subclass E21.366. This subclass is substantially the same in scope as ECLA classification H01L21/329P4C.










Patents under this class:

Patent Number Title Of Patent Date Issued
8604583 Semiconductor device comprising a Schottky barrier diode Dec. 10, 2013
8581359 Schottky barrier diode Nov. 12, 2013
8492254 Method of manufacturing semiconductor devices Jul. 23, 2013
8338906 Schottky device Dec. 25, 2012
8183103 Integrated circuit structure including schottky diode and method for manufacturing the same May. 22, 2012
8169047 Semiconductor device comprising a schottky barrier diode May. 1, 2012
8143655 Trench schottky barrier diode with differential oxide thickness Mar. 27, 2012
8030193 Method of fabricating semiconductor device Oct. 4, 2011
7915703 Schottky diodes containing high barrier metal islands in a low barrier metal layer and methods of forming the same Mar. 29, 2011
7902055 Method of manufacturing a dual metal Schottky diode Mar. 8, 2011
7863172 Gallium nitride semiconductor device Jan. 4, 2011
7820473 Schottky diode and method of manufacture Oct. 26, 2010
7781859 Schottky diode structures having deep wells for improving breakdown voltages Aug. 24, 2010
7777292 Semiconductor device Aug. 17, 2010
7772599 Gallium nitride-based semiconductor stacked structure, production method thereof, and compound semiconductor and light-emitting device each using the stacked structure Aug. 10, 2010
7651905 Apparatus and method for reducing gate leakage in deep sub-micron MOS transistors using semi-rectifying contacts Jan. 26, 2010
7618884 Method and device with durable contact on silicon carbide Nov. 17, 2009
7588958 Schottky barrier diode and manufacturing method thereof Sep. 15, 2009
7521329 Semiconductor light emitting diode having textured structure and method of manufacturing the same Apr. 21, 2009
7391056 Chemical sensor using chemically induced electron-hole production at a Schottky barrier Jun. 24, 2008
7323402 Trench Schottky barrier diode with differential oxide thickness Jan. 29, 2008
7314770 Method of making light emitting device with silicon-containing encapsulant Jan. 1, 2008
7282429 Method of manufacturing Schottky diode device Oct. 16, 2007
7268005 Apparatus and method for stacking laser bars for uniform facet coating Sep. 11, 2007
7071498 Gallium nitride material devices including an electrode-defining layer and methods of forming the same Jul. 4, 2006
6235617 Semiconductor device and its manufacturing method May. 22, 2001
6111273 Semiconductor device and its manufacturing method Aug. 29, 2000
6087702 Rare-earth schottky diode structure Jul. 11, 2000
6037646 High-frequency GaAs substrate based schottky barrier diodes Mar. 14, 2000
5930636 Method of fabricating high-frequency GaAs substrate-based Schottky barrier diodes Jul. 27, 1999
5898210 Semiconductor diode with high turn on and breakdown voltages Apr. 27, 1999
5672904 Schottky carrier diode with plasma treated layer Sep. 30, 1997
5622877 Method for making high-voltage high-speed gallium arsenide power Schottky diode Apr. 22, 1997
5298437 Fabrication process for Schottky barrier diodes on a single poly bipolar process Mar. 29, 1994
5221638 Method of manufacturing a Schottky barrier semiconductor device Jun. 22, 1993
5098858 Junction between metal and zincblende-type III-V compound semiconductor and manufacturing method thereof Mar. 24, 1992
5075740 High speed, high voltage schottky semiconductor device Dec. 24, 1991
4871686 Integrated Schottky diode and transistor Oct. 3, 1989
4855796 Beam lead mixer diode Aug. 8, 1989
4640003 Method of making planar geometry Schottky diode using oblique evaporation and normal incidence proton bombardment Feb. 3, 1987
4541000 Varactor or mixer diode with surrounding substrate metal contact and top surface isolation Sep. 10, 1985
4452646 Method of making planar III-V compound device by ion implantation Jun. 5, 1984
4374012 Method of making semiconductor device having improved Schottky-barrier junction Feb. 15, 1983
4301233 Beam lead Schottky barrier diode for operation at millimeter and submillimeter wave frequencies Nov. 17, 1981
4201998 Devices with Schottky metal contacts filling a depression in a semi-conductor body May. 6, 1980
4197551 Semiconductor device having improved Schottky-barrier junction Apr. 8, 1980
4143384 Low parasitic capacitance diode Mar. 6, 1979
4108738 Method for forming contacts to semiconductor devices Aug. 22, 1978
4098921 Tantalum-gallium arsenide Schottky barrier semiconductor device Jul. 4, 1978











 
 
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