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Class Information
Number: 257/E21.367
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Multi-step process for manufacture of device of bipolar type, e.g., diodes, transistors, thyristors, resistors, capacitors) (epo) > Device comprising one or two electrodes, e.g., diode, resistor or capacitor with pn or schottky junctions (epo) > Active layer is group iii-v compound (epo) > Diode (epo) > With an heterojunction, e.g., resonant tunneling diodes (rtd) (epo)
Description: This subclass is indented under subclass E21.366. This subclass is substantially the same in scope as ECLA classification H01L21/329P4D.










Patents under this class:

Patent Number Title Of Patent Date Issued
8629047 Quantum tunneling devices and circuits with lattice-mismatched semiconductor structures Jan. 14, 2014
8604772 MEMS-based resonant tunneling devices and arrays of such devices for electric field sensing Dec. 10, 2013
8421137 Magnetic random access memory Apr. 16, 2013
8216951 Quantum tunneling devices and circuits with lattice-mismatched semiconductor structures Jul. 10, 2012
8124432 Nitride semiconductor optical element and manufacturing method thereof Feb. 28, 2012
7781248 Method of manufacturing nitride semiconductor light emitting device and nitride semiconductor light emitting device manufactured using the method Aug. 24, 2010
7776623 System and method to fabricate magnetic random access memory Aug. 17, 2010
7772599 Gallium nitride-based semiconductor stacked structure, production method thereof, and compound semiconductor and light-emitting device each using the stacked structure Aug. 10, 2010
7713770 Fabrication method of nitride semiconductor light emitting device and nitride semiconductor light emitting device thereby May. 11, 2010
5665999 Metal-semiconductor diode and process for preparing metal-semiconductor diodes Sep. 9, 1997
5659179 Ultra-small semiconductor devices having patterned edge planar surfaces Aug. 19, 1997
5294564 Method for the directed modulation of the composition or doping of semiconductors, notably for the making of planar type monolithic electronic components, use of the method and corresponding p Mar. 15, 1994
5198879 Heterojunction semiconductor device Mar. 30, 1993











 
 
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