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Class Information
Number: 257/E21.36
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Multi-step process for manufacture of device of bipolar type, e.g., diodes, transistors, thyristors, resistors, capacitors) (epo) > Device comprising one or two electrodes, e.g., diode, resistor or capacitor with pn or schottky junctions (epo) > Diode (epo) > Planar diode (epo)
Description: This subclass is indented under subclass E21.352. This subclass is substantially the same in scope as ECLA classification H01L21/329B7.










Patents under this class:

Patent Number Title Of Patent Date Issued
7821096 Semiconductor integrated circuit and system LSI including the same Oct. 26, 2010
7592199 Method for forming pinned photodiode resistant to electrical leakage Sep. 22, 2009
7544521 Negative bias critical dimension trim Jun. 9, 2009
7501333 Work function adjustment on fully silicided (FUSI) gate Mar. 10, 2009
7351599 High-powered light emitting device with improved thermal properties Apr. 1, 2008
7244646 Pixel design to improve photodiode capacitance and method of forming same Jul. 17, 2007
6770917 High-voltage diode Aug. 3, 2004
6303954 Semiconductor device with a high-voltage component in semiconductor on insulator Oct. 16, 2001
6294445 Single mask process for manufacture of fast recovery diode Sep. 25, 2001
6197649 Process for manufacturing planar fast recovery diode using reduced number of masking steps Mar. 6, 2001
5940700 Method for fabricating a semiconductor diode with BCD technology Aug. 17, 1999
5629558 Semiconductor diode integrated with bipolar/CMOS/DMOS technology May. 13, 1997
5608244 Semiconductor diode with reduced recovery current Mar. 4, 1997
5389815 Semiconductor diode with reduced recovery current Feb. 14, 1995
5347161 Stacked-layer structure polysilicon emitter contacted p-n junction diode Sep. 13, 1994











 
 
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