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Class Information
Number: 257/E21.354
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Multi-step process for manufacture of device of bipolar type, e.g., diodes, transistors, thyristors, resistors, capacitors) (epo) > Device comprising one or two electrodes, e.g., diode, resistor or capacitor with pn or schottky junctions (epo) > Diode (epo) > Transit time diode, e.g., impatt, trapatt diode (epo)
Description: This subclass is indented under subclass E21.352. This subclass is substantially the same in scope as ECLA classification H01L21/329B3.

Patents under this class:

Patent Number Title Of Patent Date Issued
8492866 Isolated Zener diode Jul. 23, 2013
4872039 Buried lateral diode and method for making same Oct. 3, 1989

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