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Class Information
Number: 257/E21.349
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Processes or apparatus adapted for manufacture or treatment of semiconductor or solid-state devices or of parts thereof (epo) > Manufacture or treatment of semiconductor device (epo) > Device having at least one potential-jump barrier or surface barrier, e.g., pn junction, depletion layer, carrier concentration layer (epo) > Device having semiconductor body comprising group iv elements or group iii-v compounds with or without impurities, e.g., doping materials (epo) > Radiation treatment (epo) > With high-energy radiation (epo) > Using electromagnetic radiation, e.g., laser radiation (epo) > Using incoherent radiation (epo)
Description: This subclass is indented under subclass E21.347. This subclass is substantially the same in scope as ECLA classification H01L21/268C.










Patents under this class:
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Patent Number Title Of Patent Date Issued
8629069 Semiconductor device and manufacturing method thereof Jan. 14, 2014
8551893 Semiconductor device and manufacturing method thereof Oct. 8, 2013
8435872 Method and apparatus for manufacturing semiconductor device May. 7, 2013
8316745 Semiconductor wafer pre-process annealing and gettering method and system for solar cell formation Nov. 27, 2012
8288199 Semiconductor device and manufacturing method thereof Oct. 16, 2012
8273633 Method of enhancing dopant activation without suffering additional dopant diffusion Sep. 25, 2012
8013330 Compound for organic electroluminescent device and organic electroluminescent device Sep. 6, 2011
8008657 Compound for organic electroluminescent device and organic electroluminescent device Aug. 30, 2011
8008107 Semiconductor wafer pre-process annealing and gettering method and system for solar cell formation Aug. 30, 2011
7799666 Method of spatially selective laser-assisted doping of a semiconductor Sep. 21, 2010
7772595 Nitride semiconductor substrate, method for forming a nitride semiconductor layer and method for separating the nitride semiconductor layer from the substrate Aug. 10, 2010
7772135 Method for forming poly-silicon film Aug. 10, 2010
7675072 Light emitting diode Mar. 9, 2010
7674650 Semiconductor device and manufacturing method thereof Mar. 9, 2010
7649193 Semiconductor body and semiconductor chip comprising a semiconductor body Jan. 19, 2010
7300832 Semiconductor manufacturing method using two-stage annealing Nov. 27, 2007
7041549 Method for manufacturing semiconductor device May. 9, 2006
6963692 Heat-treating methods and systems Nov. 8, 2005
6941063 Heat-treating methods and systems Sep. 6, 2005
6936797 Thermal processing method and thermal processing apparatus for substrate employing photoirradiation Aug. 30, 2005
6933235 Method for removing contaminants on a substrate Aug. 23, 2005
6897131 Advances in spike anneal processes for ultra shallow junctions May. 24, 2005
6875623 Method for fabricating semiconductor device Apr. 5, 2005
6852371 Metal processing for impurity gettering in silicon Feb. 8, 2005
6770519 Semiconductor manufacturing method using two-stage annealing Aug. 3, 2004
6767847 Method of forming a silicon nitride-silicon dioxide gate stack Jul. 27, 2004
6706643 UV-enhanced oxy-nitridation of semiconductor substrates Mar. 16, 2004
6627560 Method of manufacturing semiconductor device Sep. 30, 2003
6614005 Device and method for thermally treating substrates Sep. 2, 2003
6594446 Heat-treating methods and systems Jul. 15, 2003
6423602 Circuit manufacturing method and apparatus, anneal control method and apparatus, information storage medium Jul. 23, 2002
6383902 Method for producing a microelectronic semiconductor component May. 7, 2002
6300239 Method of manufacturing semiconductor device Oct. 9, 2001
5861609 Method and apparatus for rapid thermal processing Jan. 19, 1999
5721150 Use of silicon for integrated circuit device interconnection by direct writing of patterns therein Feb. 24, 1998
5523262 Rapid thermal annealing using thermally conductive overcoat Jun. 4, 1996
5500079 Dry etching method Mar. 19, 1996
5399523 Method for the rapid thermal processing of a semiconductor wafer by irradiation Mar. 21, 1995
5359693 Method and apparatus for a rapid thermal processing of delicate components Oct. 25, 1994
5336641 Rapid thermal annealing using thermally conductive overcoat Aug. 9, 1994
5312771 Optical annealing method for semiconductor layer and method for producing semiconductor device employing the same semiconductor layer May. 17, 1994
5279973 Rapid thermal annealing for semiconductor substrate by using incoherent light Jan. 18, 1994
5217559 Apparatus and method for in-situ deep ultraviolet photon-assisted semiconductor wafer processing Jun. 8, 1993
5204506 Plasma pinch surface treating apparatus and method of using same Apr. 20, 1993
5079187 Method for processing semiconductor materials Jan. 7, 1992
4981815 Method for rapidly thermally processing a semiconductor wafer by irradiation using semicircular or parabolic reflectors Jan. 1, 1991
4891499 Method and apparatus for real-time wafer temperature uniformity control and slip-free heating in lamp heated single-wafer rapid thermal processing systems Jan. 2, 1990
4845055 Rapid annealing under high pressure for use in fabrication of semiconductor device Jul. 4, 1989
4784723 Method for producing a single-crystalline layer Nov. 15, 1988
4754117 Annealing method by irradiation of light beams Jun. 28, 1988

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